Precursor ion damage and angular dependence of single event gate rupture in thin oxides

No correlation was observed between single-event gate rupture (SEGR) and precursor damage by heavy-ion irradiation for 7-nm thermal and nitrided oxides. Precursor ion damage at biases below SEGR threshold for fluence variations over three orders of magnitude had no significant effect on SEGR thresho...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on Nuclear Science 1998-12, Vol.45 (6), p.2509-2518
Hauptverfasser:	Sexton, F.W., Fleetwood, D.M., Shaneyfelt, M.R., Dodd, P.E., Hash, G.L., Schanwald, L.P., Loemker, R.A., Krisch, K.S., Green, M.L., Weir, B.E., Silverman, P.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	BREAKDOWN Breakdown voltage BROMINE IONS Dielectrics Electric breakdown ELECTRICAL PROPERTIES Equations GOLD IONS INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS INTEGRATED CIRCUITS Laboratories LEAKAGE CURRENT MATERIALS SCIENCE MATHEMATICAL MODELS MOSFETs Nitrogen PHYSICAL RADIATION EFFECTS SILICON OXIDES Space technology Testing Thermal resistance TRAPPING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!