Enhancement of (In,Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon

(In,Ga)N light-emitting diodes (LEDs) fabricated on a sapphire growth substrate were successfully integrated onto Si substrates by a double-transfer technique using excimer laser liftoff and Pd-In transient-liquid-phase bonding. This transfer method resulted in a bonded LED heterostructure with the...

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Veröffentlicht in:	IEEE photonics technology letters 2002-10, Vol.14 (10), p.1400-1402
Hauptverfasser:	Luo, Z.S., Cho, Y., Loryuenyong, V., Sands, T., Cheung, N.W., Yoo, M.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bonding Contact resistance Electrodes Electroluminescence Heterostructures Liftoff Light emitting diodes Metallization Palladium Proximity effect Sapphire Silicon Silicon substrates Surface resistance Threshold voltage
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