A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures
A semiempirical model for electroabsorption in GaAs/AlGaAs quantum wells that is simple and has sufficient accuracy to make it suitable as a fast design tool for multiple quantum well (MQW) optical modulators is proposed. The model is based on a higher-order perturbation approach which includes all...
Gespeichert in:
| Veröffentlicht in: | IEEE journal of quantum electronics 1990-02, Vol.26 (2), p.296-304 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 304 |
|---|---|
| container_issue | 2 |
| container_start_page | 296 |
| container_title | IEEE journal of quantum electronics |
| container_volume | 26 |
| creator | lengyel, G. Jelley, K.W. Engelmann, R.W.H. |
| description | A semiempirical model for electroabsorption in GaAs/AlGaAs quantum wells that is simple and has sufficient accuracy to make it suitable as a fast design tool for multiple quantum well (MQW) optical modulators is proposed. The model is based on a higher-order perturbation approach which includes all bound solutions of the unperturbed Hamiltonian. To complete the model, semiempirical relationships are set up for both the zero-field absorption peak and the half-width at half-maximum (HWHM) values of the heavy-hole exciton. Comparison with extensive experimental data shows a remarkable agreement for a range of wells between 5 and 20 nm and for photon energies on the long wavelength side of the absorption peak. These wavelength and well-size ranges coincide with those needed for practical design.< > |
| doi_str_mv | 10.1109/3.44961 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28769469</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>44961</ieee_id><sourcerecordid>28606111</sourcerecordid><originalsourceid>FETCH-LOGICAL-c247t-abbb643d005ad4a736a4622ea1be3ff6f40f74f58c67e1ffbc7ba6c010d5a5cc3</originalsourceid><addsrcrecordid>eNqNkE1LAzEQhoMoWKt49paD6GnbTDeb3T2WolUoeNHzMptOIJL9aJJF_PduP-jZ08swD88ML2P3IGYAopynMylLBRdsAllWJJBDeskmQkCRlFDm1-wmhO9xlLIQE2aWPFBjE2p6661Gx5tuS46bznNypKPvsA6d76PtWm5bvsZlmC_dPngzuGh7R3w3YBuHhv-QOwgGh3EUhOgHHQdP4ZZdGXSB7k45ZV-vL5-rt2TzsX5fLTeJXsg8JljXtZLpVogMtxLzVKFUiwUh1JQao4wUJpcmK7TKCYypdV6j0gLENsNM63TKno7e3ne7gUKsGhv0-BW21A2hWhS5KqUq_wEqoQBgBJ-PoPZdCJ5M1XvboP-tQFT7wqu0OhQ-ko8nJYaxSOOx1Tac8fEuyFSN2MMRs0R03h4Vf4zuiYA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28606111</pqid></control><display><type>article</type><title>A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures</title><source>IEEE Electronic Library (IEL)</source><creator>lengyel, G. ; Jelley, K.W. ; Engelmann, R.W.H.</creator><creatorcontrib>lengyel, G. ; Jelley, K.W. ; Engelmann, R.W.H.</creatorcontrib><description>A semiempirical model for electroabsorption in GaAs/AlGaAs quantum wells that is simple and has sufficient accuracy to make it suitable as a fast design tool for multiple quantum well (MQW) optical modulators is proposed. The model is based on a higher-order perturbation approach which includes all bound solutions of the unperturbed Hamiltonian. To complete the model, semiempirical relationships are set up for both the zero-field absorption peak and the half-width at half-maximum (HWHM) values of the heavy-hole exciton. Comparison with extensive experimental data shows a remarkable agreement for a range of wells between 5 and 20 nm and for photon energies on the long wavelength side of the absorption peak. These wavelength and well-size ranges coincide with those needed for practical design.< ></description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.44961</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Exact sciences and technology ; Excitons ; Fundamental areas of phenomenology (including applications) ; Gallium arsenide ; Optical design ; Optical elements, devices, and systems ; Optical modulation ; Optical processors, correlators, and modulators ; Optics ; Physics ; Quantum well devices</subject><ispartof>IEEE journal of quantum electronics, 1990-02, Vol.26 (2), p.296-304</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c247t-abbb643d005ad4a736a4622ea1be3ff6f40f74f58c67e1ffbc7ba6c010d5a5cc3</citedby><cites>FETCH-LOGICAL-c247t-abbb643d005ad4a736a4622ea1be3ff6f40f74f58c67e1ffbc7ba6c010d5a5cc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/44961$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/44961$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6941436$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>lengyel, G.</creatorcontrib><creatorcontrib>Jelley, K.W.</creatorcontrib><creatorcontrib>Engelmann, R.W.H.</creatorcontrib><title>A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>A semiempirical model for electroabsorption in GaAs/AlGaAs quantum wells that is simple and has sufficient accuracy to make it suitable as a fast design tool for multiple quantum well (MQW) optical modulators is proposed. The model is based on a higher-order perturbation approach which includes all bound solutions of the unperturbed Hamiltonian. To complete the model, semiempirical relationships are set up for both the zero-field absorption peak and the half-width at half-maximum (HWHM) values of the heavy-hole exciton. Comparison with extensive experimental data shows a remarkable agreement for a range of wells between 5 and 20 nm and for photon energies on the long wavelength side of the absorption peak. These wavelength and well-size ranges coincide with those needed for practical design.< ></description><subject>Absorption</subject><subject>Exact sciences and technology</subject><subject>Excitons</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Gallium arsenide</subject><subject>Optical design</subject><subject>Optical elements, devices, and systems</subject><subject>Optical modulation</subject><subject>Optical processors, correlators, and modulators</subject><subject>Optics</subject><subject>Physics</subject><subject>Quantum well devices</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LAzEQhoMoWKt49paD6GnbTDeb3T2WolUoeNHzMptOIJL9aJJF_PduP-jZ08swD88ML2P3IGYAopynMylLBRdsAllWJJBDeskmQkCRlFDm1-wmhO9xlLIQE2aWPFBjE2p6661Gx5tuS46bznNypKPvsA6d76PtWm5bvsZlmC_dPngzuGh7R3w3YBuHhv-QOwgGh3EUhOgHHQdP4ZZdGXSB7k45ZV-vL5-rt2TzsX5fLTeJXsg8JljXtZLpVogMtxLzVKFUiwUh1JQao4wUJpcmK7TKCYypdV6j0gLENsNM63TKno7e3ne7gUKsGhv0-BW21A2hWhS5KqUq_wEqoQBgBJ-PoPZdCJ5M1XvboP-tQFT7wqu0OhQ-ko8nJYaxSOOx1Tac8fEuyFSN2MMRs0R03h4Vf4zuiYA</recordid><startdate>19900201</startdate><enddate>19900201</enddate><creator>lengyel, G.</creator><creator>Jelley, K.W.</creator><creator>Engelmann, R.W.H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19900201</creationdate><title>A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures</title><author>lengyel, G. ; Jelley, K.W. ; Engelmann, R.W.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c247t-abbb643d005ad4a736a4622ea1be3ff6f40f74f58c67e1ffbc7ba6c010d5a5cc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Absorption</topic><topic>Exact sciences and technology</topic><topic>Excitons</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Gallium arsenide</topic><topic>Optical design</topic><topic>Optical elements, devices, and systems</topic><topic>Optical modulation</topic><topic>Optical processors, correlators, and modulators</topic><topic>Optics</topic><topic>Physics</topic><topic>Quantum well devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>lengyel, G.</creatorcontrib><creatorcontrib>Jelley, K.W.</creatorcontrib><creatorcontrib>Engelmann, R.W.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>lengyel, G.</au><au>Jelley, K.W.</au><au>Engelmann, R.W.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1990-02-01</date><risdate>1990</risdate><volume>26</volume><issue>2</issue><spage>296</spage><epage>304</epage><pages>296-304</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>A semiempirical model for electroabsorption in GaAs/AlGaAs quantum wells that is simple and has sufficient accuracy to make it suitable as a fast design tool for multiple quantum well (MQW) optical modulators is proposed. The model is based on a higher-order perturbation approach which includes all bound solutions of the unperturbed Hamiltonian. To complete the model, semiempirical relationships are set up for both the zero-field absorption peak and the half-width at half-maximum (HWHM) values of the heavy-hole exciton. Comparison with extensive experimental data shows a remarkable agreement for a range of wells between 5 and 20 nm and for photon energies on the long wavelength side of the absorption peak. These wavelength and well-size ranges coincide with those needed for practical design.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/3.44961</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9197 |
| ispartof | IEEE journal of quantum electronics, 1990-02, Vol.26 (2), p.296-304 |
| issn | 0018-9197 1558-1713 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28769469 |
| source | IEEE Electronic Library (IEL) |
| subjects | Absorption Exact sciences and technology Excitons Fundamental areas of phenomenology (including applications) Gallium arsenide Optical design Optical elements, devices, and systems Optical modulation Optical processors, correlators, and modulators Optics Physics Quantum well devices |
| title | A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T12%3A16%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20semi-empirical%20model%20for%20electroabsorption%20in%20GaAs/AlGaAs%20multiple%20quantum%20well%20modulator%20structures&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=lengyel,%20G.&rft.date=1990-02-01&rft.volume=26&rft.issue=2&rft.spage=296&rft.epage=304&rft.pages=296-304&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/3.44961&rft_dat=%3Cproquest_RIE%3E28606111%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28606111&rft_id=info:pmid/&rft_ieee_id=44961&rfr_iscdi=true |