Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD

The InAs quantum dot (QD) structures grown on (100) 2°, 6°, 10°, 15° off-angles to (111)A GaAs substrate have been investigated by atomic force microscopy (AFM) and cryogenic photoluminescence (PL). The exact-angle InAs/GaAs is used as the reference sample. The blue shift of PL peak spectra with inc...

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Veröffentlicht in:	Thin solid films 2006-03, Vol.498 (1), p.183-187
Hauptverfasser:	Hsu, M.-Y., Tang, S.-F., Chiang, C.-D., Su, C.-C., Wang, L.-C., Kuo, C.-T.
Format:	Artikel
Sprache:	eng
Schlagworte:	AFM Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Metal-organic chemical vapour deposition (MOCVD) Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Physics Quantum dot infrared photodetector (QDIP) Quantum dots
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