High-performance substrate-removed InGaAs Schottky photodetectors

High-performance, vertical In/sub 0.53/Ga/sub 0.47/As Schottky diodes are demonstrated. An InP-substrate removal process exposes the underlying surface of lattice-matched epitaxial layers. The newly exposed surface facilitates ohmic contact and simplifies alignment of the optical input to the active...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE photonics technology letters 1998-08, Vol.10 (8), p.1144-1146
Hauptverfasser:	Spaziani, S.M., Vaccaro, K., Lorenzo, J.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Dark current Detectors Epitaxial layers Indium gallium arsenide Ohmic contacts Parasitic capacitance Passivation Photodetectors Schottky diodes
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!