Evaluation of tin nitride (Sn 3 N 4 ) via atomic layer deposition using novel volatile Sn precursors
Novel Sn precursors, Sn(tbip) 2 , Sn(tbtp) 2 , and Sn(tbta) 2 , were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formati...
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| Veröffentlicht in: | Dalton transactions : an international journal of inorganic chemistry 2023-10, Vol.52 (41), p.15033-15042 |
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| container_title | Dalton transactions : an international journal of inorganic chemistry |
| container_volume | 52 |
| creator | Park, Hyeonbin Choi, Heenang Shin, Sunyoung Park, Bo Keun Kang, Kibum Ryu, Ji Yeon Eom, Taeyong Chung, Taek-Mo |
| description | Novel Sn precursors, Sn(tbip)
2
, Sn(tbtp)
2
, and Sn(tbta)
2
, were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formation of monomeric SnL
2
with distorted seesaw geometry. Thermogravimetric analysis demonstrated the exceptional volatility of all complexes. Sn(tbtp)
2
showed the lowest residual weight of 2.7% at 265 °C. Sn
3
N
4
thin films were successfully synthesized using Sn(tbtp)
2
as the Sn precursor and NH
3
plasma. The precursor exhibited ideal characteristics for atomic layer deposition, with a saturated growth per cycle value of 1.9 Å cy
−1
and no need for incubation when the film was deposited at 150–225 °C. The indirect optical bandgap of the Sn
3
N
4
film was approximately 1–1.2 eV, as determined through ultraviolet–visible spectroscopy. Therefore, this study suggests that the Sn
3
N
4
thin films prepared using the newly synthesized Sn precursor are suitable for application in thin-film photovoltaic devices. |
| doi_str_mv | 10.1039/d3dt02138f |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2874834357</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2874834357</sourcerecordid><originalsourceid>FETCH-LOGICAL-c251t-f632e95ad5e327c94949d835840cde5e6b0feb65a3b1a890fe2dd411b17de9253</originalsourceid><addsrcrecordid>eNpdkEtLxDAUhYsoOI5u_AUBN6NQzbOPpcxDhUEXjuuSNreSIZPUpC3MvzfOiAu5i3svfOdwOElyTfA9wax8UEz1mBJWtCfJhPA8T0vK-OnfTbPz5CKELcaUYkEniVqO0gyy184i16JeW2R177UCNHu3iKFXxNEtGrVEsnc73SAj9-CRgs4FfZANQdtPZN0IBo3ORC8DKGo7D83gg_PhMjlrpQlw9bunycdquZk_p-u3p5f54zptqCB92maMQimkEsBo3pQ8jiqYKDhuFAjIatxCnQnJaiKLMj5UKU5ITXIFJRVsmsyOvp13XwOEvtrp0IAx0oIbQkWLnBeMM5FH9OYfunWDtzFdpAqcCZ7xLFJ3R6rxLgQPbdV5vZN-XxFc_RReLdhicyh8xb4BTldyDg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2880654646</pqid></control><display><type>article</type><title>Evaluation of tin nitride (Sn 3 N 4 ) via atomic layer deposition using novel volatile Sn precursors</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Park, Hyeonbin ; Choi, Heenang ; Shin, Sunyoung ; Park, Bo Keun ; Kang, Kibum ; Ryu, Ji Yeon ; Eom, Taeyong ; Chung, Taek-Mo</creator><creatorcontrib>Park, Hyeonbin ; Choi, Heenang ; Shin, Sunyoung ; Park, Bo Keun ; Kang, Kibum ; Ryu, Ji Yeon ; Eom, Taeyong ; Chung, Taek-Mo</creatorcontrib><description>Novel Sn precursors, Sn(tbip)
2
, Sn(tbtp)
2
, and Sn(tbta)
2
, were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formation of monomeric SnL
2
with distorted seesaw geometry. Thermogravimetric analysis demonstrated the exceptional volatility of all complexes. Sn(tbtp)
2
showed the lowest residual weight of 2.7% at 265 °C. Sn
3
N
4
thin films were successfully synthesized using Sn(tbtp)
2
as the Sn precursor and NH
3
plasma. The precursor exhibited ideal characteristics for atomic layer deposition, with a saturated growth per cycle value of 1.9 Å cy
−1
and no need for incubation when the film was deposited at 150–225 °C. The indirect optical bandgap of the Sn
3
N
4
film was approximately 1–1.2 eV, as determined through ultraviolet–visible spectroscopy. Therefore, this study suggests that the Sn
3
N
4
thin films prepared using the newly synthesized Sn precursor are suitable for application in thin-film photovoltaic devices.</description><identifier>ISSN: 1477-9226</identifier><identifier>EISSN: 1477-9234</identifier><identifier>DOI: 10.1039/d3dt02138f</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Ammonia ; Atomic layer epitaxy ; Crystallography ; Density functional theory ; Photovoltaic cells ; Precursors ; Synthesis ; Thermogravimetric analysis ; Thin films ; Tin</subject><ispartof>Dalton transactions : an international journal of inorganic chemistry, 2023-10, Vol.52 (41), p.15033-15042</ispartof><rights>Copyright Royal Society of Chemistry 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c251t-f632e95ad5e327c94949d835840cde5e6b0feb65a3b1a890fe2dd411b17de9253</cites><orcidid>0000-0002-4066-0500 ; 0000-0003-1674-1826 ; 0009-0004-2935-7414 ; 0000-0002-9646-9553 ; 0000-0001-6321-5576 ; 0000-0002-5169-2671</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Park, Hyeonbin</creatorcontrib><creatorcontrib>Choi, Heenang</creatorcontrib><creatorcontrib>Shin, Sunyoung</creatorcontrib><creatorcontrib>Park, Bo Keun</creatorcontrib><creatorcontrib>Kang, Kibum</creatorcontrib><creatorcontrib>Ryu, Ji Yeon</creatorcontrib><creatorcontrib>Eom, Taeyong</creatorcontrib><creatorcontrib>Chung, Taek-Mo</creatorcontrib><title>Evaluation of tin nitride (Sn 3 N 4 ) via atomic layer deposition using novel volatile Sn precursors</title><title>Dalton transactions : an international journal of inorganic chemistry</title><description>Novel Sn precursors, Sn(tbip)
2
, Sn(tbtp)
2
, and Sn(tbta)
2
, were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formation of monomeric SnL
2
with distorted seesaw geometry. Thermogravimetric analysis demonstrated the exceptional volatility of all complexes. Sn(tbtp)
2
showed the lowest residual weight of 2.7% at 265 °C. Sn
3
N
4
thin films were successfully synthesized using Sn(tbtp)
2
as the Sn precursor and NH
3
plasma. The precursor exhibited ideal characteristics for atomic layer deposition, with a saturated growth per cycle value of 1.9 Å cy
−1
and no need for incubation when the film was deposited at 150–225 °C. The indirect optical bandgap of the Sn
3
N
4
film was approximately 1–1.2 eV, as determined through ultraviolet–visible spectroscopy. Therefore, this study suggests that the Sn
3
N
4
thin films prepared using the newly synthesized Sn precursor are suitable for application in thin-film photovoltaic devices.</description><subject>Ammonia</subject><subject>Atomic layer epitaxy</subject><subject>Crystallography</subject><subject>Density functional theory</subject><subject>Photovoltaic cells</subject><subject>Precursors</subject><subject>Synthesis</subject><subject>Thermogravimetric analysis</subject><subject>Thin films</subject><subject>Tin</subject><issn>1477-9226</issn><issn>1477-9234</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpdkEtLxDAUhYsoOI5u_AUBN6NQzbOPpcxDhUEXjuuSNreSIZPUpC3MvzfOiAu5i3svfOdwOElyTfA9wax8UEz1mBJWtCfJhPA8T0vK-OnfTbPz5CKELcaUYkEniVqO0gyy184i16JeW2R177UCNHu3iKFXxNEtGrVEsnc73SAj9-CRgs4FfZANQdtPZN0IBo3ORC8DKGo7D83gg_PhMjlrpQlw9bunycdquZk_p-u3p5f54zptqCB92maMQimkEsBo3pQ8jiqYKDhuFAjIatxCnQnJaiKLMj5UKU5ITXIFJRVsmsyOvp13XwOEvtrp0IAx0oIbQkWLnBeMM5FH9OYfunWDtzFdpAqcCZ7xLFJ3R6rxLgQPbdV5vZN-XxFc_RReLdhicyh8xb4BTldyDg</recordid><startdate>20231024</startdate><enddate>20231024</enddate><creator>Park, Hyeonbin</creator><creator>Choi, Heenang</creator><creator>Shin, Sunyoung</creator><creator>Park, Bo Keun</creator><creator>Kang, Kibum</creator><creator>Ryu, Ji Yeon</creator><creator>Eom, Taeyong</creator><creator>Chung, Taek-Mo</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-4066-0500</orcidid><orcidid>https://orcid.org/0000-0003-1674-1826</orcidid><orcidid>https://orcid.org/0009-0004-2935-7414</orcidid><orcidid>https://orcid.org/0000-0002-9646-9553</orcidid><orcidid>https://orcid.org/0000-0001-6321-5576</orcidid><orcidid>https://orcid.org/0000-0002-5169-2671</orcidid></search><sort><creationdate>20231024</creationdate><title>Evaluation of tin nitride (Sn 3 N 4 ) via atomic layer deposition using novel volatile Sn precursors</title><author>Park, Hyeonbin ; Choi, Heenang ; Shin, Sunyoung ; Park, Bo Keun ; Kang, Kibum ; Ryu, Ji Yeon ; Eom, Taeyong ; Chung, Taek-Mo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c251t-f632e95ad5e327c94949d835840cde5e6b0feb65a3b1a890fe2dd411b17de9253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Ammonia</topic><topic>Atomic layer epitaxy</topic><topic>Crystallography</topic><topic>Density functional theory</topic><topic>Photovoltaic cells</topic><topic>Precursors</topic><topic>Synthesis</topic><topic>Thermogravimetric analysis</topic><topic>Thin films</topic><topic>Tin</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Hyeonbin</creatorcontrib><creatorcontrib>Choi, Heenang</creatorcontrib><creatorcontrib>Shin, Sunyoung</creatorcontrib><creatorcontrib>Park, Bo Keun</creatorcontrib><creatorcontrib>Kang, Kibum</creatorcontrib><creatorcontrib>Ryu, Ji Yeon</creatorcontrib><creatorcontrib>Eom, Taeyong</creatorcontrib><creatorcontrib>Chung, Taek-Mo</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Dalton transactions : an international journal of inorganic chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Hyeonbin</au><au>Choi, Heenang</au><au>Shin, Sunyoung</au><au>Park, Bo Keun</au><au>Kang, Kibum</au><au>Ryu, Ji Yeon</au><au>Eom, Taeyong</au><au>Chung, Taek-Mo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evaluation of tin nitride (Sn 3 N 4 ) via atomic layer deposition using novel volatile Sn precursors</atitle><jtitle>Dalton transactions : an international journal of inorganic chemistry</jtitle><date>2023-10-24</date><risdate>2023</risdate><volume>52</volume><issue>41</issue><spage>15033</spage><epage>15042</epage><pages>15033-15042</pages><issn>1477-9226</issn><eissn>1477-9234</eissn><abstract>Novel Sn precursors, Sn(tbip)
2
, Sn(tbtp)
2
, and Sn(tbta)
2
, were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formation of monomeric SnL
2
with distorted seesaw geometry. Thermogravimetric analysis demonstrated the exceptional volatility of all complexes. Sn(tbtp)
2
showed the lowest residual weight of 2.7% at 265 °C. Sn
3
N
4
thin films were successfully synthesized using Sn(tbtp)
2
as the Sn precursor and NH
3
plasma. The precursor exhibited ideal characteristics for atomic layer deposition, with a saturated growth per cycle value of 1.9 Å cy
−1
and no need for incubation when the film was deposited at 150–225 °C. The indirect optical bandgap of the Sn
3
N
4
film was approximately 1–1.2 eV, as determined through ultraviolet–visible spectroscopy. Therefore, this study suggests that the Sn
3
N
4
thin films prepared using the newly synthesized Sn precursor are suitable for application in thin-film photovoltaic devices.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d3dt02138f</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-4066-0500</orcidid><orcidid>https://orcid.org/0000-0003-1674-1826</orcidid><orcidid>https://orcid.org/0009-0004-2935-7414</orcidid><orcidid>https://orcid.org/0000-0002-9646-9553</orcidid><orcidid>https://orcid.org/0000-0001-6321-5576</orcidid><orcidid>https://orcid.org/0000-0002-5169-2671</orcidid></addata></record> |
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| identifier | ISSN: 1477-9226 |
| ispartof | Dalton transactions : an international journal of inorganic chemistry, 2023-10, Vol.52 (41), p.15033-15042 |
| issn | 1477-9226 1477-9234 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_2874834357 |
| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| subjects | Ammonia Atomic layer epitaxy Crystallography Density functional theory Photovoltaic cells Precursors Synthesis Thermogravimetric analysis Thin films Tin |
| title | Evaluation of tin nitride (Sn 3 N 4 ) via atomic layer deposition using novel volatile Sn precursors |
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