Analysis of Optically Controlled Microwave/Millimeter-Wave Device Structures
Light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor band gap for GaAs MESFET, InP MESFET, Al/sub 0.3/Ga/sub 0.7/As/GaAs high electron mobility transistor (HEMT), and GaAs permeable base transistor (PBT) are analytically...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1986-12, Vol.34 (12), p.1349-1355 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Simons, R.N. Bhasin, K.B. |
| description | Light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor band gap for GaAs MESFET, InP MESFET, Al/sub 0.3/Ga/sub 0.7/As/GaAs high electron mobility transistor (HEMT), and GaAs permeable base transistor (PBT) are analytically obtained. The GaAs PBT and GaAs MESFET have higher sensitivity than the InP MESFET. However, the Al/sub 0.3/Ga/sub 0.7/As/ GaAs HEMT is observed to have the highest sensitivity. Variations in the small-signal parameters, such as channel conductance, gate-to-source capacitance, and transconductance, as well as transient parameters, such as switching time and power-delay product, of GaAs MESFET with illumination are computed. The computed capacitance and transconductance are compared with the experimentally obtained values and are found to be in fair agreement. Based on these results, the design considerations for an optically controlled MESFET switch are discussed. Finally, variation in device parameter due to optical illumination and its effect on the cutoff frequencies f/sub T/ and f/sub max/ are also investigated. |
| doi_str_mv | 10.1109/TMTT.1986.1133548 |
| format | Article |
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The GaAs PBT and GaAs MESFET have higher sensitivity than the InP MESFET. However, the Al/sub 0.3/Ga/sub 0.7/As/ GaAs HEMT is observed to have the highest sensitivity. Variations in the small-signal parameters, such as channel conductance, gate-to-source capacitance, and transconductance, as well as transient parameters, such as switching time and power-delay product, of GaAs MESFET with illumination are computed. The computed capacitance and transconductance are compared with the experimentally obtained values and are found to be in fair agreement. Based on these results, the design considerations for an optically controlled MESFET switch are discussed. Finally, variation in device parameter due to optical illumination and its effect on the cutoff frequencies f/sub T/ and f/sub max/ are also investigated.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.1986.1133548</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>Legacy CDMS: IEEE</publisher><subject>Applied sciences ; Electron optics ; Electronics ; Electronics And Electrical Engineering ; Exact sciences and technology ; Gallium arsenide ; HEMTs ; Lighting ; MESFETs ; Microwave devices ; Millimeter wave devices ; Optical control ; Optical devices ; Optical sensors ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>IEEE transactions on microwave theory and techniques, 1986-12, Vol.34 (12), p.1349-1355</ispartof><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c647t-b2506a269413aa9a1c399dfb8c277ca229bd6a2ebe07532f6389abbc4b6328093</citedby><cites>FETCH-LOGICAL-c647t-b2506a269413aa9a1c399dfb8c277ca229bd6a2ebe07532f6389abbc4b6328093</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1133548$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,796,23930,23931,25140,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1133548$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8376323$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Simons, R.N.</creatorcontrib><creatorcontrib>Bhasin, K.B.</creatorcontrib><title>Analysis of Optically Controlled Microwave/Millimeter-Wave Device Structures</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>Light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor band gap for GaAs MESFET, InP MESFET, Al/sub 0.3/Ga/sub 0.7/As/GaAs high electron mobility transistor (HEMT), and GaAs permeable base transistor (PBT) are analytically obtained. The GaAs PBT and GaAs MESFET have higher sensitivity than the InP MESFET. However, the Al/sub 0.3/Ga/sub 0.7/As/ GaAs HEMT is observed to have the highest sensitivity. Variations in the small-signal parameters, such as channel conductance, gate-to-source capacitance, and transconductance, as well as transient parameters, such as switching time and power-delay product, of GaAs MESFET with illumination are computed. The computed capacitance and transconductance are compared with the experimentally obtained values and are found to be in fair agreement. Based on these results, the design considerations for an optically controlled MESFET switch are discussed. Finally, variation in device parameter due to optical illumination and its effect on the cutoff frequencies f/sub T/ and f/sub max/ are also investigated.</description><subject>Applied sciences</subject><subject>Electron optics</subject><subject>Electronics</subject><subject>Electronics And Electrical Engineering</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>HEMTs</subject><subject>Lighting</subject><subject>MESFETs</subject><subject>Microwave devices</subject><subject>Millimeter wave devices</subject><subject>Optical control</subject><subject>Optical devices</subject><subject>Optical sensors</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><sourceid>CYI</sourceid><recordid>eNqNkctLAzEQxoMoWB9_gOhhD-JtNa_N4yj1CS0erHgM2XQWIuluTbZK_3uztOjRnoZhfvPNx3wInRF8TQjWN7PpbHZNtBK5Zaziag-NSFXJUguJ99EIY6JKzRU-REcpfeSWV1iN0OS2tWGdfCq6pnhZ9t7ZENbFuGv72IUA82LqXey-7RfcTH0IfgE9xPI998UdfHkHxWsfV65fRUgn6KCxIcHpth6jt4f72fipnLw8Po9vJ6UTXPZlTSssLBWaE2attsQxredNrRyV0llKdT3Pc6gBy4rRRjClbV07XgtGFdbsGF1tdJex-1xB6s3CJwch2Ba6VTJU5UfQiu8ASiYpkTuAPP-1wv-DnHDJpdgJ5FQOHskGzG9OKUJjltEvbFwbgs2QrRmyNUO2Zptt3rncituUA2uibZ1Pv4uKZQOUZexig7U2WZMTTYOMxJgJjgeL55uxB4C_q9sbPw8CtHA</recordid><startdate>19861201</startdate><enddate>19861201</enddate><creator>Simons, R.N.</creator><creator>Bhasin, K.B.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>CYE</scope><scope>CYI</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope><scope>7U5</scope></search><sort><creationdate>19861201</creationdate><title>Analysis of Optically Controlled Microwave/Millimeter-Wave Device Structures</title><author>Simons, R.N. ; Bhasin, K.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c647t-b2506a269413aa9a1c399dfb8c277ca229bd6a2ebe07532f6389abbc4b6328093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Applied sciences</topic><topic>Electron optics</topic><topic>Electronics</topic><topic>Electronics And Electrical Engineering</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>HEMTs</topic><topic>Lighting</topic><topic>MESFETs</topic><topic>Microwave devices</topic><topic>Millimeter wave devices</topic><topic>Optical control</topic><topic>Optical devices</topic><topic>Optical sensors</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Simons, R.N.</creatorcontrib><creatorcontrib>Bhasin, K.B.</creatorcontrib><collection>NASA Scientific and Technical Information</collection><collection>NASA Technical Reports Server</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Simons, R.N.</au><au>Bhasin, K.B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of Optically Controlled Microwave/Millimeter-Wave Device Structures</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1986-12-01</date><risdate>1986</risdate><volume>34</volume><issue>12</issue><spage>1349</spage><epage>1355</epage><pages>1349-1355</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>Light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor band gap for GaAs MESFET, InP MESFET, Al/sub 0.3/Ga/sub 0.7/As/GaAs high electron mobility transistor (HEMT), and GaAs permeable base transistor (PBT) are analytically obtained. The GaAs PBT and GaAs MESFET have higher sensitivity than the InP MESFET. However, the Al/sub 0.3/Ga/sub 0.7/As/ GaAs HEMT is observed to have the highest sensitivity. Variations in the small-signal parameters, such as channel conductance, gate-to-source capacitance, and transconductance, as well as transient parameters, such as switching time and power-delay product, of GaAs MESFET with illumination are computed. The computed capacitance and transconductance are compared with the experimentally obtained values and are found to be in fair agreement. Based on these results, the design considerations for an optically controlled MESFET switch are discussed. Finally, variation in device parameter due to optical illumination and its effect on the cutoff frequencies f/sub T/ and f/sub max/ are also investigated.</abstract><cop>Legacy CDMS</cop><pub>IEEE</pub><doi>10.1109/TMTT.1986.1133548</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 1986-12, Vol.34 (12), p.1349-1355 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28737217 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electron optics Electronics Electronics And Electrical Engineering Exact sciences and technology Gallium arsenide HEMTs Lighting MESFETs Microwave devices Millimeter wave devices Optical control Optical devices Optical sensors Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Analysis of Optically Controlled Microwave/Millimeter-Wave Device Structures |
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