Electron spin resonance evidence that E'(gamma) centers can behave as switching oxide traps

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide tap in thermally grown SiO(2) gate oxides on Si. Switching oxide traps can "switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semicondu...

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Veröffentlicht in:	IEEE Transactions on Nuclear Science 1995-12, Vol.42 (6), p.1744-1749
Hauptverfasser:	Conley, J F, Lenahan, P M, Lelis, A J, Oldham, T R
Format:	Artikel
Sprache:	eng
Schlagworte:	CRYSTAL DEFECTS ELECTRICAL PROPERTIES INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS MOSFET PHYSICAL RADIATION EFFECTS SILICON SILICON OXIDES
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Beschreibung
Zusammenfassung:	We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide tap in thermally grown SiO(2) gate oxides on Si. Switching oxide traps can "switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'(gamma) centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps
ISSN:	0018-9499
DOI:	10.1109/23.488774