Surface oxidation of electromagnetically levitated molten silicon under a condition of oxygen-supersaturation

Surface oxidation of electromagnetically levitated molten silicon under a condition of oxygen-supersaturation

Surface oxidation of a molten silicon droplet levitated under undercooled and oxygen-supersaturated conditions was observed. After the melt surface was covered with a SiO 2 film, temperature fluctuation took place; this mainly corresponds to two competing phenomena, i.e. the exothermic reaction of S...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Scripta materialia 2006-02, Vol.54 (4), p.695-699
Hauptverfasser: Hibiya, Taketoshi, Hokama, Satoshi, Koike, Yusuke, Rinno, Masaki, Kawamura, Hiroshi, Fukuyama, Hiroyuki, Higuchi, Kensuke, Watanabe, Masahito
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Elemental semiconductors
Exact sciences and technology
Image analysis
Metals. Metallurgy
Solidification
Thermodynamics
Undercooling
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Surface oxidation of a molten silicon droplet levitated under undercooled and oxygen-supersaturated conditions was observed. After the melt surface was covered with a SiO 2 film, temperature fluctuation took place; this mainly corresponds to two competing phenomena, i.e. the exothermic reaction of SiO 2 formation and the endothermic reaction of SiO evaporation, which enhances the undercooling.
ISSN:1359-6462
1872-8456
DOI:10.1016/j.scriptamat.2005.07.043