Electroplated metal microstructures embedded in fusion-bonded silicon: conductors and magnetic materials
Fabrication methods for integrating thick (tens or hundreds of micrometers) electroplated metallic microstructures inside fusion-bonded silicon wafers are proposed and validated. Cu and Ni/sub 80/Fe/sub 20/ (permalloy) test structures were embedded inside of cavities in silicon wafers, which were fu...
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| Veröffentlicht in: | Journal of microelectromechanical systems 2004-10, Vol.13 (5), p.791-798 |
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| container_title | Journal of microelectromechanical systems |
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| creator | Arnold, D.P. Cros, F. Zana, I. Veazie, D.R. Allen, M.G. |
| description | Fabrication methods for integrating thick (tens or hundreds of micrometers) electroplated metallic microstructures inside fusion-bonded silicon wafers are proposed and validated. Cu and Ni/sub 80/Fe/sub 20/ (permalloy) test structures were embedded inside of cavities in silicon wafers, which were fusion-bonded at 500/spl deg/C for 4h with nearly 100% yield. Resistance tests validated the electrical integrity of the metals after annealing, and magnetic measurements indicated the Ni-Fe maintained its magnetic performance after annealing. Additional mechanical tests verified a strong, uniform bond, and that the presence of the metals does not degrade the bond strength. These results demonstrate the ability to integrate conductive and magnetic materials in wafer-bonded silicon, a method useful for a variety of multiwafer, MEMS devices. |
| doi_str_mv | 10.1109/JMEMS.2004.835770 |
| format | Article |
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Cu and Ni/sub 80/Fe/sub 20/ (permalloy) test structures were embedded inside of cavities in silicon wafers, which were fusion-bonded at 500/spl deg/C for 4h with nearly 100% yield. Resistance tests validated the electrical integrity of the metals after annealing, and magnetic measurements indicated the Ni-Fe maintained its magnetic performance after annealing. Additional mechanical tests verified a strong, uniform bond, and that the presence of the metals does not degrade the bond strength. 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Cu and Ni/sub 80/Fe/sub 20/ (permalloy) test structures were embedded inside of cavities in silicon wafers, which were fusion-bonded at 500/spl deg/C for 4h with nearly 100% yield. Resistance tests validated the electrical integrity of the metals after annealing, and magnetic measurements indicated the Ni-Fe maintained its magnetic performance after annealing. Additional mechanical tests verified a strong, uniform bond, and that the presence of the metals does not degrade the bond strength. These results demonstrate the ability to integrate conductive and magnetic materials in wafer-bonded silicon, a method useful for a variety of multiwafer, MEMS devices.</description><subject>Annealing</subject><subject>Bonding strength</subject><subject>Conducting materials</subject><subject>Devices</subject><subject>Electric resistance</subject><subject>Fabrication</subject><subject>Iron</subject><subject>Magnetic materials</subject><subject>Microelectromechanical systems</subject><subject>Microstructure</subject><subject>Silicon</subject><subject>Testing</subject><subject>Wafer bonding</subject><subject>Wafers</subject><issn>1057-7157</issn><issn>1941-0158</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkT1PxDAMhisEEp8_ALFUDDD1iJu0TdnQ6fjSnRiAOUoTF4La5kjSgX9PyiEhMcBiW_bjV7LfJDkGMgMg9cX9arF6nOWEsBmnRVWRrWQPagYZgYJvx5oUVVZBUe0m-96_EQKM8XIveV10qIKz604G1GmPQXZpb5SzPrhRhdGhT7FvUOs4NkPajt7YIWvsMDW86Yyyw2Uag464dT6VQ9SRLwMGo2IR0BnZ-cNkp40Jj77zQfJ8vXia32bLh5u7-dUyU5SzkOmcIlBgNS9lPEa1tQQma1Ug0TkWstYN8JJJqYHKUtOWkqkLrGmhUaykB8n5Rnft7PuIPojeeIVdJwe0oxcRLUuSQxHJsz_JnFc5I1-S_4GUVlVZR_D0F_hmRzfEc0WdEx4xDhGCDTT92DtsxdqZXroPAURMXoovL8Xkpdh4GXdONjsGEX94yoAVjH4C_ZacCQ</recordid><startdate>20041001</startdate><enddate>20041001</enddate><creator>Arnold, D.P.</creator><creator>Cros, F.</creator><creator>Zana, I.</creator><creator>Veazie, D.R.</creator><creator>Allen, M.G.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Cu and Ni/sub 80/Fe/sub 20/ (permalloy) test structures were embedded inside of cavities in silicon wafers, which were fusion-bonded at 500/spl deg/C for 4h with nearly 100% yield. Resistance tests validated the electrical integrity of the metals after annealing, and magnetic measurements indicated the Ni-Fe maintained its magnetic performance after annealing. Additional mechanical tests verified a strong, uniform bond, and that the presence of the metals does not degrade the bond strength. These results demonstrate the ability to integrate conductive and magnetic materials in wafer-bonded silicon, a method useful for a variety of multiwafer, MEMS devices.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JMEMS.2004.835770</doi><tpages>8</tpages></addata></record> |
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| issn | 1057-7157 1941-0158 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Bonding strength Conducting materials Devices Electric resistance Fabrication Iron Magnetic materials Microelectromechanical systems Microstructure Silicon Testing Wafer bonding Wafers |
| title | Electroplated metal microstructures embedded in fusion-bonded silicon: conductors and magnetic materials |
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