Testing and diagnostics of CMOS circuits using light emission from off-state leakage current

In recent years, innovative applications based on the detection of emission sources such as the light emission from off-state leakage current (LEOSLC) of CMOS transistors have been developed for testing and diagnosing modern ultralarge-scale integration circuits. In this paper, we show that LEOSLC c...

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Veröffentlicht in:IEEE transactions on electron devices 2004-09, Vol.51 (9), p.1455-1462
Hauptverfasser: Stellari, F., Peilin Song, Tsang, J.C., McManus, M.K., Ketchen, M.B.
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container_end_page 1462
container_issue 9
container_start_page 1455
container_title IEEE transactions on electron devices
container_volume 51
creator Stellari, F.
Peilin Song
Tsang, J.C.
McManus, M.K.
Ketchen, M.B.
description In recent years, innovative applications based on the detection of emission sources such as the light emission from off-state leakage current (LEOSLC) of CMOS transistors have been developed for testing and diagnosing modern ultralarge-scale integration circuits. In this paper, we show that LEOSLC can be used to effectively debug circuits, localize defects with a quick turn around time, read the logic state of gates, and extract the internal voltage drop of power distribution grids among others.
doi_str_mv 10.1109/TED.2004.833967
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28722356</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1325850</ieee_id><sourcerecordid>896196554</sourcerecordid><originalsourceid>FETCH-LOGICAL-c476t-f7db363d1a9d6c43f7bd5b887c4fb187919fa6b83b45a62f52304ad47d5881c83</originalsourceid><addsrcrecordid>eNqF0T1rHDEQBmBhEvDFSZ3CjQgkrvasb43KcP4KOLjIpQsIrVY6y9nbdaTdIv8-Ws5gcBFXYtAzwwwvQh8pWVNKzPn28mLNCBFr4NwofYRWVErdGCXUG7QihEJjOPBj9K6Uh1oqIdgK_dqGMqVhh93Q4S653TDW2hc8Rrz5fvcD-5T9nKaC57KwPu3uJxz2qZQ0DjjmcV9pbMrkpoD74H67XcB-zjkM03v0Nrq-hA9P7wn6eXW53dw0t3fX3zZfbxsvtJqaqLuWK95RZzrlBY-67WQLoL2ILQVtqIlOtcBbIZ1iUTJOhOuE7iQA9cBP0Nlh7mMe_8z1IFv386Hv3RDGuVgwiholpajyy38lMwQUZ-p1CJoxLhf46QV8GOc81HMtgAGijKQVnR-Qz2MpOUT7mNPe5b-WErukZ2t6dknPHtKrHZ-fxrriXR-zG3wqz22KaqLN4k4PLoUQnr85kyAJ_wewqqHN</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>889806951</pqid></control><display><type>article</type><title>Testing and diagnostics of CMOS circuits using light emission from off-state leakage current</title><source>IEEE Electronic Library (IEL)</source><creator>Stellari, F. ; Peilin Song ; Tsang, J.C. ; McManus, M.K. ; Ketchen, M.B.</creator><creatorcontrib>Stellari, F. ; Peilin Song ; Tsang, J.C. ; McManus, M.K. ; Ketchen, M.B.</creatorcontrib><description>In recent years, innovative applications based on the detection of emission sources such as the light emission from off-state leakage current (LEOSLC) of CMOS transistors have been developed for testing and diagnosing modern ultralarge-scale integration circuits. In this paper, we show that LEOSLC can be used to effectively debug circuits, localize defects with a quick turn around time, read the logic state of gates, and extract the internal voltage drop of power distribution grids among others.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2004.833967</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Circuits ; CMOS ; CMOS integrated circuits ; Design. Technologies. Operation analysis. Testing ; Electric potential ; Electric, optical and optoelectronic circuits ; Electronics ; Emission analysis ; Exact sciences and technology ; Gates ; Integrated circuit testing ; Integrated circuits ; Leakage current ; Leakage currents ; Light emission ; Logic circuit testing ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Theoretical study. Circuits analysis and design ; Transistors ; Ultra-large-scale integration ; Voltage drop</subject><ispartof>IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1455-1462</ispartof><rights>2004 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c476t-f7db363d1a9d6c43f7bd5b887c4fb187919fa6b83b45a62f52304ad47d5881c83</citedby><cites>FETCH-LOGICAL-c476t-f7db363d1a9d6c43f7bd5b887c4fb187919fa6b83b45a62f52304ad47d5881c83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1325850$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1325850$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=16170797$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Stellari, F.</creatorcontrib><creatorcontrib>Peilin Song</creatorcontrib><creatorcontrib>Tsang, J.C.</creatorcontrib><creatorcontrib>McManus, M.K.</creatorcontrib><creatorcontrib>Ketchen, M.B.</creatorcontrib><title>Testing and diagnostics of CMOS circuits using light emission from off-state leakage current</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In recent years, innovative applications based on the detection of emission sources such as the light emission from off-state leakage current (LEOSLC) of CMOS transistors have been developed for testing and diagnosing modern ultralarge-scale integration circuits. In this paper, we show that LEOSLC can be used to effectively debug circuits, localize defects with a quick turn around time, read the logic state of gates, and extract the internal voltage drop of power distribution grids among others.</description><subject>Applied sciences</subject><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric potential</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Emission analysis</subject><subject>Exact sciences and technology</subject><subject>Gates</subject><subject>Integrated circuit testing</subject><subject>Integrated circuits</subject><subject>Leakage current</subject><subject>Leakage currents</subject><subject>Light emission</subject><subject>Logic circuit testing</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Theoretical study. Circuits analysis and design</subject><subject>Transistors</subject><subject>Ultra-large-scale integration</subject><subject>Voltage drop</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0T1rHDEQBmBhEvDFSZ3CjQgkrvasb43KcP4KOLjIpQsIrVY6y9nbdaTdIv8-Ws5gcBFXYtAzwwwvQh8pWVNKzPn28mLNCBFr4NwofYRWVErdGCXUG7QihEJjOPBj9K6Uh1oqIdgK_dqGMqVhh93Q4S653TDW2hc8Rrz5fvcD-5T9nKaC57KwPu3uJxz2qZQ0DjjmcV9pbMrkpoD74H67XcB-zjkM03v0Nrq-hA9P7wn6eXW53dw0t3fX3zZfbxsvtJqaqLuWK95RZzrlBY-67WQLoL2ILQVtqIlOtcBbIZ1iUTJOhOuE7iQA9cBP0Nlh7mMe_8z1IFv386Hv3RDGuVgwiholpajyy38lMwQUZ-p1CJoxLhf46QV8GOc81HMtgAGijKQVnR-Qz2MpOUT7mNPe5b-WErukZ2t6dknPHtKrHZ-fxrriXR-zG3wqz22KaqLN4k4PLoUQnr85kyAJ_wewqqHN</recordid><startdate>20040901</startdate><enddate>20040901</enddate><creator>Stellari, F.</creator><creator>Peilin Song</creator><creator>Tsang, J.C.</creator><creator>McManus, M.K.</creator><creator>Ketchen, M.B.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20040901</creationdate><title>Testing and diagnostics of CMOS circuits using light emission from off-state leakage current</title><author>Stellari, F. ; Peilin Song ; Tsang, J.C. ; McManus, M.K. ; Ketchen, M.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c476t-f7db363d1a9d6c43f7bd5b887c4fb187919fa6b83b45a62f52304ad47d5881c83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>Circuits</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric potential</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Emission analysis</topic><topic>Exact sciences and technology</topic><topic>Gates</topic><topic>Integrated circuit testing</topic><topic>Integrated circuits</topic><topic>Leakage current</topic><topic>Leakage currents</topic><topic>Light emission</topic><topic>Logic circuit testing</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Theoretical study. Circuits analysis and design</topic><topic>Transistors</topic><topic>Ultra-large-scale integration</topic><topic>Voltage drop</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Stellari, F.</creatorcontrib><creatorcontrib>Peilin Song</creatorcontrib><creatorcontrib>Tsang, J.C.</creatorcontrib><creatorcontrib>McManus, M.K.</creatorcontrib><creatorcontrib>Ketchen, M.B.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Stellari, F.</au><au>Peilin Song</au><au>Tsang, J.C.</au><au>McManus, M.K.</au><au>Ketchen, M.B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Testing and diagnostics of CMOS circuits using light emission from off-state leakage current</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2004-09-01</date><risdate>2004</risdate><volume>51</volume><issue>9</issue><spage>1455</spage><epage>1462</epage><pages>1455-1462</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In recent years, innovative applications based on the detection of emission sources such as the light emission from off-state leakage current (LEOSLC) of CMOS transistors have been developed for testing and diagnosing modern ultralarge-scale integration circuits. In this paper, we show that LEOSLC can be used to effectively debug circuits, localize defects with a quick turn around time, read the logic state of gates, and extract the internal voltage drop of power distribution grids among others.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2004.833967</doi><tpages>8</tpages></addata></record>
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1557-9646
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subjects Applied sciences
Circuits
CMOS
CMOS integrated circuits
Design. Technologies. Operation analysis. Testing
Electric potential
Electric, optical and optoelectronic circuits
Electronics
Emission analysis
Exact sciences and technology
Gates
Integrated circuit testing
Integrated circuits
Leakage current
Leakage currents
Light emission
Logic circuit testing
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Theoretical study. Circuits analysis and design
Transistors
Ultra-large-scale integration
Voltage drop
title Testing and diagnostics of CMOS circuits using light emission from off-state leakage current
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-13T13%3A01%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Testing%20and%20diagnostics%20of%20CMOS%20circuits%20using%20light%20emission%20from%20off-state%20leakage%20current&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Stellari,%20F.&rft.date=2004-09-01&rft.volume=51&rft.issue=9&rft.spage=1455&rft.epage=1462&rft.pages=1455-1462&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2004.833967&rft_dat=%3Cproquest_RIE%3E896196554%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=889806951&rft_id=info:pmid/&rft_ieee_id=1325850&rfr_iscdi=true