γ-Radiation influence on the photoelectrical properties of oxide–p-InSe heterostructure
γ-Radiation ( 60Co) influence on the photoelectrical parameters of the intrinsic oxide–p-InSe heterostructures is investigated. Its influence is found in reducing the resistivity of the substrate as well as in potential barrier increasing between the oxide and semiconductor. It was established that...
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| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2005-04, Vol.118 (1), p.147-149 |
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| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
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| creator | Kovalyuk, Z.D. Katerynchuk, V.M. Mintyanskii, I.V. Savchuk, A.I. Sydor, O.M. |
| description | γ-Radiation (
60Co) influence on the photoelectrical parameters of the intrinsic oxide–p-InSe heterostructures is investigated. Its influence is found in reducing the resistivity of the substrate as well as in potential barrier increasing between the oxide and semiconductor. It was established that after the γ-irradiation at their illumination a short-circuit current increased by more than twice and the open-circuit voltage was increased by 15%. Changes of the photoelectric parameters are explained starting from the model taking into account a formation in the base semiconductor of the radiation-induced defects of acceptor nature. |
| doi_str_mv | 10.1016/j.mseb.2004.12.024 |
| format | Article |
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60Co) influence on the photoelectrical parameters of the intrinsic oxide–p-InSe heterostructures is investigated. Its influence is found in reducing the resistivity of the substrate as well as in potential barrier increasing between the oxide and semiconductor. It was established that after the γ-irradiation at their illumination a short-circuit current increased by more than twice and the open-circuit voltage was increased by 15%. Changes of the photoelectric parameters are explained starting from the model taking into account a formation in the base semiconductor of the radiation-induced defects of acceptor nature.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/j.mseb.2004.12.024</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Heterostructure ; InSe ; Intrinsic oxide ; γ-Radiation</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2005-04, Vol.118 (1), p.147-149</ispartof><rights>2004 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-1ab72eb14cade30e97697a93c2bfc10b68967aca623bdb39480a386e8dd9c2233</citedby><cites>FETCH-LOGICAL-c331t-1ab72eb14cade30e97697a93c2bfc10b68967aca623bdb39480a386e8dd9c2233</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mseb.2004.12.024$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Kovalyuk, Z.D.</creatorcontrib><creatorcontrib>Katerynchuk, V.M.</creatorcontrib><creatorcontrib>Mintyanskii, I.V.</creatorcontrib><creatorcontrib>Savchuk, A.I.</creatorcontrib><creatorcontrib>Sydor, O.M.</creatorcontrib><title>γ-Radiation influence on the photoelectrical properties of oxide–p-InSe heterostructure</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>γ-Radiation (
60Co) influence on the photoelectrical parameters of the intrinsic oxide–p-InSe heterostructures is investigated. Its influence is found in reducing the resistivity of the substrate as well as in potential barrier increasing between the oxide and semiconductor. It was established that after the γ-irradiation at their illumination a short-circuit current increased by more than twice and the open-circuit voltage was increased by 15%. Changes of the photoelectric parameters are explained starting from the model taking into account a formation in the base semiconductor of the radiation-induced defects of acceptor nature.</description><subject>Heterostructure</subject><subject>InSe</subject><subject>Intrinsic oxide</subject><subject>γ-Radiation</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKxDAUhoMoOI6-gKuu3LUmJ7VtwI2Il4EBwcvGTUiTUyZDp6lJKrrzHXwU38OH8ElsGdeuDgf-7_Cfj5BjRjNGWXG6zjYB6wwozTMGGYV8h8xYVfI0F3m-S2ZUAEvPGC33yUEIa0opA4AZef7-Su-VsSpa1yW2a9oBO43JuMQVJv3KRYct6uitVm3Se9ejjxZD4prEvVmDPx-ffbroHjBZYUTvQvSDjoPHQ7LXqDbg0d-ck6frq8fL23R5d7O4vFimmnMWU6bqErBmuVYGOUVRFqJUgmuoG81oXVSiKJVWBfDa1FzkFVW8KrAyRmgAzufkZHt3LPcyYIhyY4PGtlUduiFIqEomBIUxCNugHlsGj43svd0o_y4ZlZNGuZaTRjlplAzkqHGEzrcQji-8WvQyaDspMtaPWqRx9j_8Fyv8fyA</recordid><startdate>20050425</startdate><enddate>20050425</enddate><creator>Kovalyuk, Z.D.</creator><creator>Katerynchuk, V.M.</creator><creator>Mintyanskii, I.V.</creator><creator>Savchuk, A.I.</creator><creator>Sydor, O.M.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20050425</creationdate><title>γ-Radiation influence on the photoelectrical properties of oxide–p-InSe heterostructure</title><author>Kovalyuk, Z.D. ; Katerynchuk, V.M. ; Mintyanskii, I.V. ; Savchuk, A.I. ; Sydor, O.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-1ab72eb14cade30e97697a93c2bfc10b68967aca623bdb39480a386e8dd9c2233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Heterostructure</topic><topic>InSe</topic><topic>Intrinsic oxide</topic><topic>γ-Radiation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kovalyuk, Z.D.</creatorcontrib><creatorcontrib>Katerynchuk, V.M.</creatorcontrib><creatorcontrib>Mintyanskii, I.V.</creatorcontrib><creatorcontrib>Savchuk, A.I.</creatorcontrib><creatorcontrib>Sydor, O.M.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kovalyuk, Z.D.</au><au>Katerynchuk, V.M.</au><au>Mintyanskii, I.V.</au><au>Savchuk, A.I.</au><au>Sydor, O.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>γ-Radiation influence on the photoelectrical properties of oxide–p-InSe heterostructure</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2005-04-25</date><risdate>2005</risdate><volume>118</volume><issue>1</issue><spage>147</spage><epage>149</epage><pages>147-149</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>γ-Radiation (
60Co) influence on the photoelectrical parameters of the intrinsic oxide–p-InSe heterostructures is investigated. Its influence is found in reducing the resistivity of the substrate as well as in potential barrier increasing between the oxide and semiconductor. It was established that after the γ-irradiation at their illumination a short-circuit current increased by more than twice and the open-circuit voltage was increased by 15%. Changes of the photoelectric parameters are explained starting from the model taking into account a formation in the base semiconductor of the radiation-induced defects of acceptor nature.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mseb.2004.12.024</doi><tpages>3</tpages></addata></record> |
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| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2005-04, Vol.118 (1), p.147-149 |
| issn | 0921-5107 1873-4944 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Heterostructure InSe Intrinsic oxide γ-Radiation |
| title | γ-Radiation influence on the photoelectrical properties of oxide–p-InSe heterostructure |
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