Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers
Deep-red (770-nm) top-surface-emitting vertical-cavity AlGaAs lasers were fabricated and operated continuously at room temperature. An Al/sub 0.14/Ga/sub 0.86/As superlattice was used for an active-gain medium. Efficient current funneling was achieved by deep proton implantation. Continuous-wave (CW...
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| Veröffentlicht in: | IEEE photonics technology letters 1991-02, Vol.3 (2), p.108-109 |
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| container_title | IEEE photonics technology letters |
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| creator | Lee, Y.H. Tell, B. Brown-Goebeler, K.F. Leibenguth, R.E. Mattera, V.D. |
| description | Deep-red (770-nm) top-surface-emitting vertical-cavity AlGaAs lasers were fabricated and operated continuously at room temperature. An Al/sub 0.14/Ga/sub 0.86/As superlattice was used for an active-gain medium. Efficient current funneling was achieved by deep proton implantation. Continuous-wave (CW) threshold currents were 4.6 and 6.3 mA at 3.9- and 3.4-V bias for 10- and 15- mu m-diameter lasers, respectively. The maximum CW output power was >1.1 mW at room temperature without heat sink. Arrays of various top-surface-emitting lasers based on current funneling are expected to generate many applications for photonic switching, chip-to-chip communication, optical computing, and printing.< > |
| doi_str_mv | 10.1109/68.76856 |
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An Al/sub 0.14/Ga/sub 0.86/As superlattice was used for an active-gain medium. Efficient current funneling was achieved by deep proton implantation. Continuous-wave (CW) threshold currents were 4.6 and 6.3 mA at 3.9- and 3.4-V bias for 10- and 15- mu m-diameter lasers, respectively. The maximum CW output power was >1.1 mW at room temperature without heat sink. Arrays of various top-surface-emitting lasers based on current funneling are expected to generate many applications for photonic switching, chip-to-chip communication, optical computing, and printing.< ></description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.76856</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>426002 - Engineering- Lasers & Masers- (1990-) ; ALUMINIUM ARSENIDES ; ALUMINIUM COMPOUNDS ; ARSENIC COMPOUNDS ; ARSENIDES ; Communication switching ; EFFICIENCY ; ELECTROMAGNETIC RADIATION ; EMISSION ; ENERGY ; ENERGY-LEVEL TRANSITIONS ; ENGINEERING ; FABRICATION ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; Heat sinks ; ION IMPLANTATION ; LASER CAVITIES ; LASERS ; MEDIUM TEMPERATURE ; OPERATION ; Optical arrays ; Optical computing ; PNICTIDES ; Power generation ; Protons ; RADIATIONS ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR LASERS ; SOLID STATE LASERS ; STIMULATED EMISSION ; SUPERLATTICES ; Temperature ; Threshold current ; THRESHOLD ENERGY ; Vertical cavity surface emitting lasers ; VISIBLE RADIATION</subject><ispartof>IEEE photonics technology letters, 1991-02, Vol.3 (2), p.108-109</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-627b05e6f442fa8f2ac570e8431b44e06686929ddfdef22ef9c2fd0987827c013</citedby><cites>FETCH-LOGICAL-c429t-627b05e6f442fa8f2ac570e8431b44e06686929ddfdef22ef9c2fd0987827c013</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/76856$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,778,782,794,883,27907,27908,54741</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/76856$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/5047889$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Y.H.</creatorcontrib><creatorcontrib>Tell, B.</creatorcontrib><creatorcontrib>Brown-Goebeler, K.F.</creatorcontrib><creatorcontrib>Leibenguth, R.E.</creatorcontrib><creatorcontrib>Mattera, V.D.</creatorcontrib><title>Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>Deep-red (770-nm) top-surface-emitting vertical-cavity AlGaAs lasers were fabricated and operated continuously at room temperature. An Al/sub 0.14/Ga/sub 0.86/As superlattice was used for an active-gain medium. Efficient current funneling was achieved by deep proton implantation. Continuous-wave (CW) threshold currents were 4.6 and 6.3 mA at 3.9- and 3.4-V bias for 10- and 15- mu m-diameter lasers, respectively. The maximum CW output power was >1.1 mW at room temperature without heat sink. Arrays of various top-surface-emitting lasers based on current funneling are expected to generate many applications for photonic switching, chip-to-chip communication, optical computing, and printing.< ></description><subject>426002 - Engineering- Lasers & Masers- (1990-)</subject><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>Communication switching</subject><subject>EFFICIENCY</subject><subject>ELECTROMAGNETIC RADIATION</subject><subject>EMISSION</subject><subject>ENERGY</subject><subject>ENERGY-LEVEL TRANSITIONS</subject><subject>ENGINEERING</subject><subject>FABRICATION</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>Heat sinks</subject><subject>ION IMPLANTATION</subject><subject>LASER CAVITIES</subject><subject>LASERS</subject><subject>MEDIUM TEMPERATURE</subject><subject>OPERATION</subject><subject>Optical arrays</subject><subject>Optical computing</subject><subject>PNICTIDES</subject><subject>Power generation</subject><subject>Protons</subject><subject>RADIATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR LASERS</subject><subject>SOLID STATE LASERS</subject><subject>STIMULATED EMISSION</subject><subject>SUPERLATTICES</subject><subject>Temperature</subject><subject>Threshold current</subject><subject>THRESHOLD ENERGY</subject><subject>Vertical cavity surface emitting lasers</subject><subject>VISIBLE RADIATION</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqN0U1LxDAQBuAiCq6r4NVb8SBesiZpmo_j4scqLHhR8Bay6UQj3bYm6cr-e7tWvOppBt6HgZfJslOCZ4RgdcXlTHBZ8r1sQhQjCBPB9ocdDzshRXmYHcX4jjFhZcEm2csNQIcCVLltm-Sbvu1j_mk2kKe2Q7EPzlhAsPZpCF_zDYTkramRNRuftvm8Xph5zGPfQajNYCzktYkQ4nF24Ewd4eRnTrPnu9un63u0fFw8XM-XyDKqEuJUrHAJ3DFGnZGOGlsKDJIVZMUYYM4lV1RVlavAUQpOWeoqrKSQVFhMiml2Pt5tY_I6Wp_Avg1dGrBJl5gJKdWALkbUhfajh5j02kcLdW0aGAprKgWREst_QMpUIcXfsCSCM7a7eDlCG9oYAzjdBb82YasJ1ruPaS7198cGejZSDwC_bMy-AFhpkC8</recordid><startdate>19910201</startdate><enddate>19910201</enddate><creator>Lee, Y.H.</creator><creator>Tell, B.</creator><creator>Brown-Goebeler, K.F.</creator><creator>Leibenguth, R.E.</creator><creator>Mattera, V.D.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope><scope>OTOTI</scope></search><sort><creationdate>19910201</creationdate><title>Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers</title><author>Lee, Y.H. ; Tell, B. ; Brown-Goebeler, K.F. ; Leibenguth, R.E. ; Mattera, V.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-627b05e6f442fa8f2ac570e8431b44e06686929ddfdef22ef9c2fd0987827c013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>426002 - Engineering- Lasers & Masers- (1990-)</topic><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>Communication switching</topic><topic>EFFICIENCY</topic><topic>ELECTROMAGNETIC RADIATION</topic><topic>EMISSION</topic><topic>ENERGY</topic><topic>ENERGY-LEVEL TRANSITIONS</topic><topic>ENGINEERING</topic><topic>FABRICATION</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>Heat sinks</topic><topic>ION IMPLANTATION</topic><topic>LASER CAVITIES</topic><topic>LASERS</topic><topic>MEDIUM TEMPERATURE</topic><topic>OPERATION</topic><topic>Optical arrays</topic><topic>Optical computing</topic><topic>PNICTIDES</topic><topic>Power generation</topic><topic>Protons</topic><topic>RADIATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR LASERS</topic><topic>SOLID STATE LASERS</topic><topic>STIMULATED EMISSION</topic><topic>SUPERLATTICES</topic><topic>Temperature</topic><topic>Threshold current</topic><topic>THRESHOLD ENERGY</topic><topic>Vertical cavity surface emitting lasers</topic><topic>VISIBLE RADIATION</topic><toplevel>online_resources</toplevel><creatorcontrib>Lee, Y.H.</creatorcontrib><creatorcontrib>Tell, B.</creatorcontrib><creatorcontrib>Brown-Goebeler, K.F.</creatorcontrib><creatorcontrib>Leibenguth, R.E.</creatorcontrib><creatorcontrib>Mattera, V.D.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>OSTI.GOV</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Y.H.</au><au>Tell, B.</au><au>Brown-Goebeler, K.F.</au><au>Leibenguth, R.E.</au><au>Mattera, V.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1991-02-01</date><risdate>1991</risdate><volume>3</volume><issue>2</issue><spage>108</spage><epage>109</epage><pages>108-109</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>Deep-red (770-nm) top-surface-emitting vertical-cavity AlGaAs lasers were fabricated and operated continuously at room temperature. An Al/sub 0.14/Ga/sub 0.86/As superlattice was used for an active-gain medium. Efficient current funneling was achieved by deep proton implantation. Continuous-wave (CW) threshold currents were 4.6 and 6.3 mA at 3.9- and 3.4-V bias for 10- and 15- mu m-diameter lasers, respectively. The maximum CW output power was >1.1 mW at room temperature without heat sink. Arrays of various top-surface-emitting lasers based on current funneling are expected to generate many applications for photonic switching, chip-to-chip communication, optical computing, and printing.< ></abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/68.76856</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 1991-02, Vol.3 (2), p.108-109 |
| issn | 1041-1135 1941-0174 |
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| source | IEEE Electronic Library (IEL) |
| subjects | 426002 - Engineering- Lasers & Masers- (1990-) ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES Communication switching EFFICIENCY ELECTROMAGNETIC RADIATION EMISSION ENERGY ENERGY-LEVEL TRANSITIONS ENGINEERING FABRICATION GALLIUM ARSENIDES GALLIUM COMPOUNDS Heat sinks ION IMPLANTATION LASER CAVITIES LASERS MEDIUM TEMPERATURE OPERATION Optical arrays Optical computing PNICTIDES Power generation Protons RADIATIONS SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SOLID STATE LASERS STIMULATED EMISSION SUPERLATTICES Temperature Threshold current THRESHOLD ENERGY Vertical cavity surface emitting lasers VISIBLE RADIATION |
| title | Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers |
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