Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's
Device characteristics of compositionally graded AlInAs/GaInAs heterojunction bipolar transistors (HBTs) measured and analyzed from cryogenic temperatures up to 250 degrees C are discussed. Excellent stability in DC and RF performance is observed at elevated temperatures, which is desirable for high...
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| Veröffentlicht in: | IEEE transactions on electron devices 1993-09, Vol.40 (9), p.1583-1588 |
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| container_end_page | 1588 |
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| container_issue | 9 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 40 |
| creator | Hafizi, M. Stanchina, W.E. Metzger, R.A. Macdonald, P.A. Williams, F. |
| description | Device characteristics of compositionally graded AlInAs/GaInAs heterojunction bipolar transistors (HBTs) measured and analyzed from cryogenic temperatures up to 250 degrees C are discussed. Excellent stability in DC and RF performance is observed at elevated temperatures, which is desirable for high-speed and high-density integrated circuit applications. DC current gain exhibits about 10% variation over the entire measured temperature range. F/sub T/ and f/sub max/ at 125 degrees C decreased by approximately 10% from their room-temperature values while improving steadily when the device was cooled down to near-liquid-helium temperature, the common-emitter breakdown voltage is 8.0 V at room temperature and reduces to 7.5 V at 125 degrees C. Likewise, the collector-base breakdown voltage and the base-emitter breakdown voltage reduce by about 0.5 V over the same temperature range. The breakdown voltages increase significantly at cryogenic temperatures. The low turn-on voltage and excellent low-temperature characteristics make the AlInAs/GaInAs HBT attractive for cryogenic applications.< > |
| doi_str_mv | 10.1109/16.231562 |
| format | Article |
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Excellent stability in DC and RF performance is observed at elevated temperatures, which is desirable for high-speed and high-density integrated circuit applications. DC current gain exhibits about 10% variation over the entire measured temperature range. F/sub T/ and f/sub max/ at 125 degrees C decreased by approximately 10% from their room-temperature values while improving steadily when the device was cooled down to near-liquid-helium temperature, the common-emitter breakdown voltage is 8.0 V at room temperature and reduces to 7.5 V at 125 degrees C. Likewise, the collector-base breakdown voltage and the base-emitter breakdown voltage reduce by about 0.5 V over the same temperature range. The breakdown voltages increase significantly at cryogenic temperatures. The low turn-on voltage and excellent low-temperature characteristics make the AlInAs/GaInAs HBT attractive for cryogenic applications.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.231562</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Application specific integrated circuits ; Applied sciences ; Circuit stability ; Cryogenics ; Electronics ; Exact sciences and technology ; Gain measurement ; Heterojunction bipolar transistors ; Integrated circuit measurements ; Radio frequency ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Excellent stability in DC and RF performance is observed at elevated temperatures, which is desirable for high-speed and high-density integrated circuit applications. DC current gain exhibits about 10% variation over the entire measured temperature range. F/sub T/ and f/sub max/ at 125 degrees C decreased by approximately 10% from their room-temperature values while improving steadily when the device was cooled down to near-liquid-helium temperature, the common-emitter breakdown voltage is 8.0 V at room temperature and reduces to 7.5 V at 125 degrees C. Likewise, the collector-base breakdown voltage and the base-emitter breakdown voltage reduce by about 0.5 V over the same temperature range. The breakdown voltages increase significantly at cryogenic temperatures. The low turn-on voltage and excellent low-temperature characteristics make the AlInAs/GaInAs HBT attractive for cryogenic applications.< ></description><subject>Application specific integrated circuits</subject><subject>Applied sciences</subject><subject>Circuit stability</subject><subject>Cryogenics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain measurement</subject><subject>Heterojunction bipolar transistors</subject><subject>Integrated circuit measurements</subject><subject>Radio frequency</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature dependence</subject><subject>Temperature distribution</subject><subject>Temperature measurement</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqFkL9PwzAQhS0EEqUwsDJlQCCGtD47sZ2xFPoDVUJCZY7cy1kEpUmx04H_nlSpujI9nd533_AYuwU-AuDZGNRISEiVOGMDSFMdZypR52zAOZg4k0ZesqsQvrtTJYkYsLc1bXfkbbv3FBW0o7qgGilqXPQyjWxdRB-zCL-st9iSL0NbYjiUk2pZT8J4bg8RLZ7Xj-GaXThbBbo55pB9zl7X00W8ep8vp5NVjFLqNgYstHLSmY0kC5JLynRKaWpQaakRjYVECLExlGqnNKpMGO6QcwFcFhsjh-yh9-5887On0ObbMiBVla2p2YdcZLwTdfC_oNGgwCQd-NSD6JsQPLl858ut9b858Pwwaw4q72ft2Puj1Aa0lfO2xjKcHpJuZw1Zh931WElEp_bo-AN_SXvK</recordid><startdate>19930901</startdate><enddate>19930901</enddate><creator>Hafizi, M.</creator><creator>Stanchina, W.E.</creator><creator>Metzger, R.A.</creator><creator>Macdonald, P.A.</creator><creator>Williams, F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19930901</creationdate><title>Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's</title><author>Hafizi, M. ; Stanchina, W.E. ; Metzger, R.A. ; Macdonald, P.A. ; Williams, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-1cd76f3f8b3ea1303e975e558c6737cc8a14222b8e57f67c69280fc002103db83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Application specific integrated circuits</topic><topic>Applied sciences</topic><topic>Circuit stability</topic><topic>Cryogenics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain measurement</topic><topic>Heterojunction bipolar transistors</topic><topic>Integrated circuit measurements</topic><topic>Radio frequency</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature dependence</topic><topic>Temperature distribution</topic><topic>Temperature measurement</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hafizi, M.</creatorcontrib><creatorcontrib>Stanchina, W.E.</creatorcontrib><creatorcontrib>Metzger, R.A.</creatorcontrib><creatorcontrib>Macdonald, P.A.</creatorcontrib><creatorcontrib>Williams, F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hafizi, M.</au><au>Stanchina, W.E.</au><au>Metzger, R.A.</au><au>Macdonald, P.A.</au><au>Williams, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1993-09-01</date><risdate>1993</risdate><volume>40</volume><issue>9</issue><spage>1583</spage><epage>1588</epage><pages>1583-1588</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Device characteristics of compositionally graded AlInAs/GaInAs heterojunction bipolar transistors (HBTs) measured and analyzed from cryogenic temperatures up to 250 degrees C are discussed. Excellent stability in DC and RF performance is observed at elevated temperatures, which is desirable for high-speed and high-density integrated circuit applications. DC current gain exhibits about 10% variation over the entire measured temperature range. F/sub T/ and f/sub max/ at 125 degrees C decreased by approximately 10% from their room-temperature values while improving steadily when the device was cooled down to near-liquid-helium temperature, the common-emitter breakdown voltage is 8.0 V at room temperature and reduces to 7.5 V at 125 degrees C. Likewise, the collector-base breakdown voltage and the base-emitter breakdown voltage reduce by about 0.5 V over the same temperature range. The breakdown voltages increase significantly at cryogenic temperatures. The low turn-on voltage and excellent low-temperature characteristics make the AlInAs/GaInAs HBT attractive for cryogenic applications.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.231562</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1993-09, Vol.40 (9), p.1583-1588 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28716184 |
| source | IEEE Electronic Library (IEL) |
| subjects | Application specific integrated circuits Applied sciences Circuit stability Cryogenics Electronics Exact sciences and technology Gain measurement Heterojunction bipolar transistors Integrated circuit measurements Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature dependence Temperature distribution Temperature measurement Transistors |
| title | Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's |
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