Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS2: Atomic‐Level Observation, Large‐Scale Statistics, and Mechanism Understanding

Understanding the growth behavior and morphology evolution of defects in 2D transition metal dichalcogenides is significant for the performance tuning of nanoelectronic devices. Here, the low‐voltage aberration‐corrected transmission electron microscopy with an in situ heating holder and a fast fram...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-01, Vol.20 (4), p.e2303511-n/a
Hauptverfasser:	Li, Shouheng, Lin, Jinguo, Chen, Yun, Luo, Zheng, Cheng, Haifeng, Liu, Feng, Zhang, Jin, Wang, Shanshan
Format:	Artikel
Sprache:	eng
Schlagworte:	2D materials AC‐transmission electron microscopy (TEM) Anisotropy Atomic structure Defects Density functional theory Dislocations Electrons Evolution growth anisotropy Image reconstruction line defects Molybdenum disulfide Monolayers Monte Carlo simulation Morphology MoS2 Nanoelectronics Nanomaterials Nanotechnology devices Statuary Transition metal compounds
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