XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation
In this paper we present the results of XPS study of the surface chemistry of L-CVD SnO2 thin films onto Si(100) before and after subsequent additional oxidation. Moreover, the ageing effect was also studied in order to check the influence of ambient oxidation. As-deposited L-CVD SnO2 thin films exh...
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| Veröffentlicht in: | Thin solid films 2005-10, Vol.490 (1), p.36-42 |
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| container_title | Thin solid films |
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| creator | KWOKA, M OTTAVIANO, L PASSACANTANDO, M SANTUCCI, S CZEMPIK, G SZUBER, J |
| description | In this paper we present the results of XPS study of the surface chemistry of L-CVD SnO2 thin films onto Si(100) before and after subsequent additional oxidation. Moreover, the ageing effect was also studied in order to check the influence of ambient oxidation. As-deposited L-CVD SnO2 thin films exhibit evident nonstoichiometry with the relative concentration [O]/[Sn] equal to 1DDT29+/-0DDT1. After in situ oxidation at high temperature (800 K) the relative concentration [O]/[Sn] increases to 1DDT95+ /-0DDT05 which corresponds to the almost stoichiometric SnO2. Almost the same relative concentration [O]/[Sn] of L-CVD SnO2 thin films has been obtained after long term exposure to air. The oxidation states of L-CVD SnO2 thin films in both cases were confirmed by the shape analysis of corresponding XPS O1s and Sn3d5 /2 peaks using the decomposition procedure. For the as-deposited L-CVD SnO2 thin films a mixture of SnO and SnO2 was observed, while for the oxidized L-CVD SnO2 thin films the domination of SnO2 was determined. |
| doi_str_mv | 10.1016/j.tsf.2005.04.014 |
| format | Article |
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Moreover, the ageing effect was also studied in order to check the influence of ambient oxidation. As-deposited L-CVD SnO2 thin films exhibit evident nonstoichiometry with the relative concentration [O]/[Sn] equal to 1DDT29+/-0DDT1. After in situ oxidation at high temperature (800 K) the relative concentration [O]/[Sn] increases to 1DDT95+ /-0DDT05 which corresponds to the almost stoichiometric SnO2. Almost the same relative concentration [O]/[Sn] of L-CVD SnO2 thin films has been obtained after long term exposure to air. The oxidation states of L-CVD SnO2 thin films in both cases were confirmed by the shape analysis of corresponding XPS O1s and Sn3d5 /2 peaks using the decomposition procedure. For the as-deposited L-CVD SnO2 thin films a mixture of SnO and SnO2 was observed, while for the oxidized L-CVD SnO2 thin films the domination of SnO2 was determined.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2005.04.014</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier Science</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Thin solid films, 2005-10, Vol.490 (1), p.36-42</ispartof><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c372t-761196328ed0148182107aa8ea7bd99768d71779c3d1fe0769e68ddfb4e3347b3</citedby><cites>FETCH-LOGICAL-c372t-761196328ed0148182107aa8ea7bd99768d71779c3d1fe0769e68ddfb4e3347b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,23909,23910,25118,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17091617$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KWOKA, M</creatorcontrib><creatorcontrib>OTTAVIANO, L</creatorcontrib><creatorcontrib>PASSACANTANDO, M</creatorcontrib><creatorcontrib>SANTUCCI, S</creatorcontrib><creatorcontrib>CZEMPIK, G</creatorcontrib><creatorcontrib>SZUBER, J</creatorcontrib><title>XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation</title><title>Thin solid films</title><description>In this paper we present the results of XPS study of the surface chemistry of L-CVD SnO2 thin films onto Si(100) before and after subsequent additional oxidation. Moreover, the ageing effect was also studied in order to check the influence of ambient oxidation. As-deposited L-CVD SnO2 thin films exhibit evident nonstoichiometry with the relative concentration [O]/[Sn] equal to 1DDT29+/-0DDT1. After in situ oxidation at high temperature (800 K) the relative concentration [O]/[Sn] increases to 1DDT95+ /-0DDT05 which corresponds to the almost stoichiometric SnO2. Almost the same relative concentration [O]/[Sn] of L-CVD SnO2 thin films has been obtained after long term exposure to air. The oxidation states of L-CVD SnO2 thin films in both cases were confirmed by the shape analysis of corresponding XPS O1s and Sn3d5 /2 peaks using the decomposition procedure. For the as-deposited L-CVD SnO2 thin films a mixture of SnO and SnO2 was observed, while for the oxidized L-CVD SnO2 thin films the domination of SnO2 was determined.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNpFkE9LAzEUxIMoWKsfwFsuetv1vWRNNkepf7FQoSreQppN6Jbtbk12wX57U1vw9GDeb4ZhCLlEyBFQ3KzyPvqcAdzmUOSAxREZYSlVxiTHYzICKCAToOCUnMW4AgBkjI_I69fbnMZ-qLa087RfOhqH4I111C7duo59-HtMs8nnPZ23M5aYuqW-btaRGt-7QLufujJ93bXn5MSbJrqLwx2Tj8eH98lzNp09vUzuppnlkvWZFIhKcFa6KvUssWQI0pjSGbmolJKirCRKqSyv0DuQQrkkVX5ROM4LueBjcr3P3YTue3Cx16modU1jWtcNUbNSlKqQLIG4B23oYgzO602o1yZsNYLezaZXOs2md7NpKHSqkzxXh3ATrWl8MK2t479RgkKBkv8CIpVsXQ</recordid><startdate>20051021</startdate><enddate>20051021</enddate><creator>KWOKA, M</creator><creator>OTTAVIANO, L</creator><creator>PASSACANTANDO, M</creator><creator>SANTUCCI, S</creator><creator>CZEMPIK, G</creator><creator>SZUBER, J</creator><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20051021</creationdate><title>XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation</title><author>KWOKA, M ; OTTAVIANO, L ; PASSACANTANDO, M ; SANTUCCI, S ; CZEMPIK, G ; SZUBER, J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-761196328ed0148182107aa8ea7bd99768d71779c3d1fe0769e68ddfb4e3347b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KWOKA, M</creatorcontrib><creatorcontrib>OTTAVIANO, L</creatorcontrib><creatorcontrib>PASSACANTANDO, M</creatorcontrib><creatorcontrib>SANTUCCI, S</creatorcontrib><creatorcontrib>CZEMPIK, G</creatorcontrib><creatorcontrib>SZUBER, J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KWOKA, M</au><au>OTTAVIANO, L</au><au>PASSACANTANDO, M</au><au>SANTUCCI, S</au><au>CZEMPIK, G</au><au>SZUBER, J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation</atitle><jtitle>Thin solid films</jtitle><date>2005-10-21</date><risdate>2005</risdate><volume>490</volume><issue>1</issue><spage>36</spage><epage>42</epage><pages>36-42</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>In this paper we present the results of XPS study of the surface chemistry of L-CVD SnO2 thin films onto Si(100) before and after subsequent additional oxidation. Moreover, the ageing effect was also studied in order to check the influence of ambient oxidation. As-deposited L-CVD SnO2 thin films exhibit evident nonstoichiometry with the relative concentration [O]/[Sn] equal to 1DDT29+/-0DDT1. After in situ oxidation at high temperature (800 K) the relative concentration [O]/[Sn] increases to 1DDT95+ /-0DDT05 which corresponds to the almost stoichiometric SnO2. Almost the same relative concentration [O]/[Sn] of L-CVD SnO2 thin films has been obtained after long term exposure to air. The oxidation states of L-CVD SnO2 thin films in both cases were confirmed by the shape analysis of corresponding XPS O1s and Sn3d5 /2 peaks using the decomposition procedure. For the as-deposited L-CVD SnO2 thin films a mixture of SnO and SnO2 was observed, while for the oxidized L-CVD SnO2 thin films the domination of SnO2 was determined.</abstract><cop>Lausanne</cop><pub>Elsevier Science</pub><doi>10.1016/j.tsf.2005.04.014</doi><tpages>7</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | XPS study of the surface chemistry of L-CVD SnO2 thin films after oxidation |
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