VB-4 charge-coupled devices in epitaxial HgCdTe/CdTe heterostructure
Gespeichert in:
Veröffentlicht in: | IEEE transactions on electron devices 1981-10, Vol.28 (10), p.1250-1251 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 1251 |
---|---|
container_issue | 10 |
container_start_page | 1250 |
container_title | IEEE transactions on electron devices |
container_volume | 28 |
creator | Kim, M.E. Taur, Y. Shin, S.H. Bostrup, G. Kim, J.C. Cheung, D.T. |
description | |
doi_str_mv | 10.1109/T-ED.1981.20578 |
format | Article |
fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28686602</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1481730</ieee_id><sourcerecordid>28686602</sourcerecordid><originalsourceid>FETCH-LOGICAL-c161t-96c3a8a882d490e3a90245798f9b22db02bf0097b21dbe59191418707daa45f83</originalsourceid><addsrcrecordid>eNpFkD1PwzAQhi0EEuVjZmDJxObWZzuJPUJbKFIllsBqOc6lNUqbYCcI_j0pRWK500nPe3r1EHIDbArA9Kygy8UUtIIpZ2muTsgE0jSnOpPZKZkwBopqocQ5uYjxfTwzKfmELN4eqEzc1oYNUtcOXYNVUuGndxgTv0-w87398rZJVpt5VeDsMJIt9hja2IfB9UPAK3JW2ybi9d--JK-Py2K-ouuXp-f5_Zo6yKAfqzhhlVWKV1IzFFYzLtNcq1qXnFcl42XNmM5LDlWJqQYNElTO8spamdZKXJK7498utB8Dxt7sfHTYNHaP7RANV5nKMsZHcHYE3dgyBqxNF_zOhm8DzBxsmcIsF-Zgy_zaGhO3x4RHxH9aKsgFEz8mm2Rg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28686602</pqid></control><display><type>article</type><title>VB-4 charge-coupled devices in epitaxial HgCdTe/CdTe heterostructure</title><source>IEEE Electronic Library (IEL)</source><creator>Kim, M.E. ; Taur, Y. ; Shin, S.H. ; Bostrup, G. ; Kim, J.C. ; Cheung, D.T.</creator><creatorcontrib>Kim, M.E. ; Taur, Y. ; Shin, S.H. ; Bostrup, G. ; Kim, J.C. ; Cheung, D.T.</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1981.20578</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><ispartof>IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1250-1251</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1481730$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1481730$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, M.E.</creatorcontrib><creatorcontrib>Taur, Y.</creatorcontrib><creatorcontrib>Shin, S.H.</creatorcontrib><creatorcontrib>Bostrup, G.</creatorcontrib><creatorcontrib>Kim, J.C.</creatorcontrib><creatorcontrib>Cheung, D.T.</creatorcontrib><title>VB-4 charge-coupled devices in epitaxial HgCdTe/CdTe heterostructure</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1981</creationdate><recordtype>article</recordtype><recordid>eNpFkD1PwzAQhi0EEuVjZmDJxObWZzuJPUJbKFIllsBqOc6lNUqbYCcI_j0pRWK500nPe3r1EHIDbArA9Kygy8UUtIIpZ2muTsgE0jSnOpPZKZkwBopqocQ5uYjxfTwzKfmELN4eqEzc1oYNUtcOXYNVUuGndxgTv0-w87398rZJVpt5VeDsMJIt9hja2IfB9UPAK3JW2ybi9d--JK-Py2K-ouuXp-f5_Zo6yKAfqzhhlVWKV1IzFFYzLtNcq1qXnFcl42XNmM5LDlWJqQYNElTO8spamdZKXJK7498utB8Dxt7sfHTYNHaP7RANV5nKMsZHcHYE3dgyBqxNF_zOhm8DzBxsmcIsF-Zgy_zaGhO3x4RHxH9aKsgFEz8mm2Rg</recordid><startdate>19811001</startdate><enddate>19811001</enddate><creator>Kim, M.E.</creator><creator>Taur, Y.</creator><creator>Shin, S.H.</creator><creator>Bostrup, G.</creator><creator>Kim, J.C.</creator><creator>Cheung, D.T.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19811001</creationdate><title>VB-4 charge-coupled devices in epitaxial HgCdTe/CdTe heterostructure</title><author>Kim, M.E. ; Taur, Y. ; Shin, S.H. ; Bostrup, G. ; Kim, J.C. ; Cheung, D.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c161t-96c3a8a882d490e3a90245798f9b22db02bf0097b21dbe59191418707daa45f83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1981</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, M.E.</creatorcontrib><creatorcontrib>Taur, Y.</creatorcontrib><creatorcontrib>Shin, S.H.</creatorcontrib><creatorcontrib>Bostrup, G.</creatorcontrib><creatorcontrib>Kim, J.C.</creatorcontrib><creatorcontrib>Cheung, D.T.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, M.E.</au><au>Taur, Y.</au><au>Shin, S.H.</au><au>Bostrup, G.</au><au>Kim, J.C.</au><au>Cheung, D.T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>VB-4 charge-coupled devices in epitaxial HgCdTe/CdTe heterostructure</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1981-10-01</date><risdate>1981</risdate><volume>28</volume><issue>10</issue><spage>1250</spage><epage>1251</epage><pages>1250-1251</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><pub>IEEE</pub><doi>10.1109/T-ED.1981.20578</doi><tpages>2</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 0018-9383 |
ispartof | IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1250-1251 |
issn | 0018-9383 1557-9646 |
language | eng |
recordid | cdi_proquest_miscellaneous_28686602 |
source | IEEE Electronic Library (IEL) |
title | VB-4 charge-coupled devices in epitaxial HgCdTe/CdTe heterostructure |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T00%3A58%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=VB-4%20charge-coupled%20devices%20in%20epitaxial%20HgCdTe/CdTe%20heterostructure&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Kim,%20M.E.&rft.date=1981-10-01&rft.volume=28&rft.issue=10&rft.spage=1250&rft.epage=1251&rft.pages=1250-1251&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/T-ED.1981.20578&rft_dat=%3Cproquest_RIE%3E28686602%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28686602&rft_id=info:pmid/&rft_ieee_id=1481730&rfr_iscdi=true |