Total dose and displacement damage effects in a radiation-hardened CMOS APS

A 512/spl times/512 CMOS active pixel sensor (APS) was designed and fabricated in a standard 0.5-/spl mu/m technology. The radiation tolerance of the sensor has been evaluated with Co-60 and proton irradiation with proton energies ranging from 11.7 to 59 MeV. The most pronounced radiation effect is...

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Veröffentlicht in:	IEEE transactions on electron devices 2003-01, Vol.50 (1), p.84-90
Hauptverfasser:	Bogaerts, J., Dierickx, B., Meynants, G., Uwaerts, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Cobalt Conductivity Damage Dark current Devices Displacement Integrated circuit noise Proton irradiation Proton radiation effects Radiation hardening
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