Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy

Photoluminescence (PL) and cathodoluminescence (CL) measurements on a variety of GaN samples confirm earlier reports that epitaxial lateral over-growth (ELOG) results in improved material quality. Depth profiling of epitaxial lateral over-growth samples, reported here for the first time using variab...

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Veröffentlicht in:	Thin solid films 2005-02, Vol.473 (2), p.308-314
Hauptverfasser:	Ryan, B.J., Lowney, D.P., Henry, M.O., McNally, P.J., McGlynn, E., Jacobs, K., Considine, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cathodoluminescence Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Depth profiling Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Luminescence Metastable defects Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Semiconductors Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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