Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy
Photoluminescence (PL) and cathodoluminescence (CL) measurements on a variety of GaN samples confirm earlier reports that epitaxial lateral over-growth (ELOG) results in improved material quality. Depth profiling of epitaxial lateral over-growth samples, reported here for the first time using variab...
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| Veröffentlicht in: | Thin solid films 2005-02, Vol.473 (2), p.308-314 |
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| creator | Ryan, B.J. Lowney, D.P. Henry, M.O. McNally, P.J. McGlynn, E. Jacobs, K. Considine, L. |
| description | Photoluminescence (PL) and cathodoluminescence (CL) measurements on a variety of GaN samples confirm earlier reports that epitaxial lateral over-growth (ELOG) results in improved material quality. Depth profiling of epitaxial lateral over-growth samples, reported here for the first time using variable energy electron beam excitation, shows that there is a substantial reduction in defect density away from the interface, and that the barriers to defect propagation are very effective. In addition to the normal yellow emission generally observed for GaN, we find intense blue emission, already assigned to a metastable defect, in some materials. Using a rapid scanning interferometer, we study the changes in the luminescence spectrum as a function of time and at a range of temperatures. We suggest possible explanations for the complex nature of the metastability displayed by the defect responsible for the blue band. |
| doi_str_mv | 10.1016/j.tsf.2004.08.065 |
| format | Article |
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Depth profiling of epitaxial lateral over-growth samples, reported here for the first time using variable energy electron beam excitation, shows that there is a substantial reduction in defect density away from the interface, and that the barriers to defect propagation are very effective. In addition to the normal yellow emission generally observed for GaN, we find intense blue emission, already assigned to a metastable defect, in some materials. Using a rapid scanning interferometer, we study the changes in the luminescence spectrum as a function of time and at a range of temperatures. We suggest possible explanations for the complex nature of the metastability displayed by the defect responsible for the blue band.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2004.08.065</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Cathodoluminescence ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Depth profiling ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Luminescence ; Metastable defects ; Optical properties ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics ; Semiconductors ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Thin solid films, 2005-02, Vol.473 (2), p.308-314</ispartof><rights>2004 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c424t-d1f43a33574fe0395765ee2c16622e9be8ff4013931d209c33ea102026ed3a8c3</citedby><cites>FETCH-LOGICAL-c424t-d1f43a33574fe0395765ee2c16622e9be8ff4013931d209c33ea102026ed3a8c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609004011800$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17136814$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ryan, B.J.</creatorcontrib><creatorcontrib>Lowney, D.P.</creatorcontrib><creatorcontrib>Henry, M.O.</creatorcontrib><creatorcontrib>McNally, P.J.</creatorcontrib><creatorcontrib>McGlynn, E.</creatorcontrib><creatorcontrib>Jacobs, K.</creatorcontrib><creatorcontrib>Considine, L.</creatorcontrib><title>Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy</title><title>Thin solid films</title><description>Photoluminescence (PL) and cathodoluminescence (CL) measurements on a variety of GaN samples confirm earlier reports that epitaxial lateral over-growth (ELOG) results in improved material quality. Depth profiling of epitaxial lateral over-growth samples, reported here for the first time using variable energy electron beam excitation, shows that there is a substantial reduction in defect density away from the interface, and that the barriers to defect propagation are very effective. In addition to the normal yellow emission generally observed for GaN, we find intense blue emission, already assigned to a metastable defect, in some materials. Using a rapid scanning interferometer, we study the changes in the luminescence spectrum as a function of time and at a range of temperatures. We suggest possible explanations for the complex nature of the metastability displayed by the defect responsible for the blue band.</description><subject>Cathodoluminescence</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Depth profiling</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Luminescence</subject><subject>Metastable defects</subject><subject>Optical properties</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Semiconductors</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kctuFDEQRVsIpAwJH5CdN7Drxo-efogVihJAisSGrK2Kuzzjkds2tntg_pJPws2MhNiwKqkep6rurapbRhtGWff-0OSkG05p29Chod32RbVhQz_WvBfsZbUpBVp3dKRX1euUDpRSxrnYVL_uj2AXyMY74jXJeyQ-ZKPAkhB9wJgNprWCwWT4aUreQsZYoj9i3EX_w5EdWGuWmTiTo5kKwZEEIexNRAJu-kON3uLKudDtiYDK5ohkxgwpw3MpT6hR5USWZNyOKMh7P3m7zMZhUujUmRb2Pv-bTaGMRZ-UD6eb6pUGm_DNJV5XTw_33-4-149fP325-_hYq5a3uZ6YbgUIse1bjVSM277bInLFuo5zHJ9x0LqlTIyCTZyOSggERjnlHU4CBiWuq3dnbpHp-4Ipy9mUc6wFh35Jkg_d0JZVpZGdG1W5MEXUMkQzQzxJRuXqnTzI4p1cvZN0kMW7MvP2AodUxNIRnDLp72DPRDewlf3h3Ifl06PBKJMyqyRTkV5lOXnzny2_AQvdthE</recordid><startdate>20050214</startdate><enddate>20050214</enddate><creator>Ryan, B.J.</creator><creator>Lowney, D.P.</creator><creator>Henry, M.O.</creator><creator>McNally, P.J.</creator><creator>McGlynn, E.</creator><creator>Jacobs, K.</creator><creator>Considine, L.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050214</creationdate><title>Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy</title><author>Ryan, B.J. ; Lowney, D.P. ; Henry, M.O. ; McNally, P.J. ; McGlynn, E. ; Jacobs, K. ; Considine, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c424t-d1f43a33574fe0395765ee2c16622e9be8ff4013931d209c33ea102026ed3a8c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Cathodoluminescence</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Depth profiling</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Luminescence</topic><topic>Metastable defects</topic><topic>Optical properties</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Semiconductors</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ryan, B.J.</creatorcontrib><creatorcontrib>Lowney, D.P.</creatorcontrib><creatorcontrib>Henry, M.O.</creatorcontrib><creatorcontrib>McNally, P.J.</creatorcontrib><creatorcontrib>McGlynn, E.</creatorcontrib><creatorcontrib>Jacobs, K.</creatorcontrib><creatorcontrib>Considine, L.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ryan, B.J.</au><au>Lowney, D.P.</au><au>Henry, M.O.</au><au>McNally, P.J.</au><au>McGlynn, E.</au><au>Jacobs, K.</au><au>Considine, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy</atitle><jtitle>Thin solid films</jtitle><date>2005-02-14</date><risdate>2005</risdate><volume>473</volume><issue>2</issue><spage>308</spage><epage>314</epage><pages>308-314</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Photoluminescence (PL) and cathodoluminescence (CL) measurements on a variety of GaN samples confirm earlier reports that epitaxial lateral over-growth (ELOG) results in improved material quality. Depth profiling of epitaxial lateral over-growth samples, reported here for the first time using variable energy electron beam excitation, shows that there is a substantial reduction in defect density away from the interface, and that the barriers to defect propagation are very effective. In addition to the normal yellow emission generally observed for GaN, we find intense blue emission, already assigned to a metastable defect, in some materials. Using a rapid scanning interferometer, we study the changes in the luminescence spectrum as a function of time and at a range of temperatures. We suggest possible explanations for the complex nature of the metastability displayed by the defect responsible for the blue band.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2004.08.065</doi><tpages>7</tpages></addata></record> |
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| subjects | Cathodoluminescence Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Depth profiling Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Luminescence Metastable defects Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Semiconductors Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy |
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