Atomic layer deposition of B2O3 thin films at room temperature

Atomic layer deposition of boron oxide thin films was demonstrated at room temperature using BBr3 and H2O as precursors. Crystallinity of the films was characterised by X-ray diffraction while time-of-flight elastic recoil detection analysis (TOF-ERDA) and X-ray fluorescence were used to analyse sto...

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Veröffentlicht in:	Thin solid films 2006-08, Vol.514 (1-2), p.145-149
Hauptverfasser:	PUTKONEN, Matti, NIINISTÖ, Lauri
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Vapor phase epitaxy growth from vapor phase
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