Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates

High-purity semi-insulating (HPSI) 4H-SiC has been widely used as a substrate material for AlGaN/GaN high electron-mobility transistors because of its fairly good lattice match with GaN and its high thermal conductivity. To control material quality, it is important to understand the nature of the de...

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Veröffentlicht in:	Journal of electronic materials 2005-04, Vol.34 (4), p.336-340
Hauptverfasser:	Fang, Z. -Q., Claflin, B., Look, D. C., Polenta, L., Mitchel, W. C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Heat conductivity Semiconductors Silicon carbide Spectrum analysis Substrates Transistors
Online-Zugang:	Volltext
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