Time-resolved plasma properties for double pulsed laser-induced breakdown spectroscopy of silicon

A systematic measurement of plasma properties (temperature, electron number density, pressure) was performed during LIBS of silicon with two nanosecond pulsed lasers operating at 1064 nm. The spectral characteristics of the plasmas were measured to determine the plasma properties as delay time betwe...

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Veröffentlicht in:Spectrochimica acta. Part B: Atomic spectroscopy 2005-08, Vol.60 (7), p.960-967
Hauptverfasser: Mao, Xianglei, Zeng, Xianzhong, Wen, Sy-Bor, Russo, Richard E.
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container_issue 7
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container_title Spectrochimica acta. Part B: Atomic spectroscopy
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creator Mao, Xianglei
Zeng, Xianzhong
Wen, Sy-Bor
Russo, Richard E.
description A systematic measurement of plasma properties (temperature, electron number density, pressure) was performed during LIBS of silicon with two nanosecond pulsed lasers operating at 1064 nm. The spectral characteristics of the plasmas were measured to determine the plasma properties as delay time between the laser pulses was changed from 0 to 10 ms. The plasma properties and crater dimensions increased abruptly from 100 to 200 ns. The crater depth increased from 2 to 10 μm (volume increased about 5 times) per pair of double pulses. Enhanced mass removal was indicative of a phase explosion mechanism. Spatial images of plasma emission were measured to study the dynamics of plasma expansion.
doi_str_mv 10.1016/j.sab.2005.06.012
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subjects Double pulse
Laser ablation
Laser induced breakdown spectroscopy
Laser-induced plasmas
title Time-resolved plasma properties for double pulsed laser-induced breakdown spectroscopy of silicon
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