Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates
Laser crystallization of a-Si:H on PES, PET and AryLite™ polymer substrates is reported. For each material, the glass transition temperature T g and the coefficient of thermal expansion have been evaluated, to determine the optimum deposition and crystallization processes conditions. 1000-Å thick in...
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| Veröffentlicht in: | Thin solid films 2005-09, Vol.487 (1), p.58-62 |
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| container_title | Thin solid films |
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| creator | Imparato, Antonio Minarini, Carla Rubino, Alfredo Tassini, Paolo Villani, Fulvia Della Sala, Dario Amendola, Eugenio Kunst, Marinus Neitzert, Heinz-Christoph Bellone, Salvatore |
| description | Laser crystallization of a-Si:H on PES, PET and AryLite™ polymer substrates is reported. For each material, the glass transition temperature
T
g and the coefficient of thermal expansion have been evaluated, to determine the optimum deposition and crystallization processes conditions. 1000-Å thick intrinsic amorphous silicon films have been deposited on the substrates by Plasma Enhanced Chemical Vapour Deposition in the temperature range of 120–250°C. Dehydrogenation and crystallization have been obtained by high energy (10 J) XeCl pulsed excimer laser. The irradiation conditions have been varied to study their influence on the electrical and optical properties of crystallized material. Structural characterization has been performed by X-ray Diffraction. Increasing the radiation energy densities up to 220 mJ/cm
2 crystallites sizes up to 750 Å have been obtained. |
| doi_str_mv | 10.1016/j.tsf.2005.01.035 |
| format | Article |
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T
g and the coefficient of thermal expansion have been evaluated, to determine the optimum deposition and crystallization processes conditions. 1000-Å thick intrinsic amorphous silicon films have been deposited on the substrates by Plasma Enhanced Chemical Vapour Deposition in the temperature range of 120–250°C. Dehydrogenation and crystallization have been obtained by high energy (10 J) XeCl pulsed excimer laser. The irradiation conditions have been varied to study their influence on the electrical and optical properties of crystallized material. Structural characterization has been performed by X-ray Diffraction. Increasing the radiation energy densities up to 220 mJ/cm
2 crystallites sizes up to 750 Å have been obtained.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2005.01.035</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Gas lasers including excimer and metal-vapor lasers ; Hydrogenated amorphous silicon ; Laser irradiation ; Lasers ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optics ; Physics ; Polymers ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; X-ray diffraction</subject><ispartof>Thin solid films, 2005-09, Vol.487 (1), p.58-62</ispartof><rights>2005 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c424t-2a3066e75a7340725cf79c9d3289bf6d042b5b115c66276894a7f3113cab16703</citedby><cites>FETCH-LOGICAL-c424t-2a3066e75a7340725cf79c9d3289bf6d042b5b115c66276894a7f3113cab16703</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2005.01.035$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17029993$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Imparato, Antonio</creatorcontrib><creatorcontrib>Minarini, Carla</creatorcontrib><creatorcontrib>Rubino, Alfredo</creatorcontrib><creatorcontrib>Tassini, Paolo</creatorcontrib><creatorcontrib>Villani, Fulvia</creatorcontrib><creatorcontrib>Della Sala, Dario</creatorcontrib><creatorcontrib>Amendola, Eugenio</creatorcontrib><creatorcontrib>Kunst, Marinus</creatorcontrib><creatorcontrib>Neitzert, Heinz-Christoph</creatorcontrib><creatorcontrib>Bellone, Salvatore</creatorcontrib><title>Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates</title><title>Thin solid films</title><description>Laser crystallization of a-Si:H on PES, PET and AryLite™ polymer substrates is reported. For each material, the glass transition temperature
T
g and the coefficient of thermal expansion have been evaluated, to determine the optimum deposition and crystallization processes conditions. 1000-Å thick intrinsic amorphous silicon films have been deposited on the substrates by Plasma Enhanced Chemical Vapour Deposition in the temperature range of 120–250°C. Dehydrogenation and crystallization have been obtained by high energy (10 J) XeCl pulsed excimer laser. The irradiation conditions have been varied to study their influence on the electrical and optical properties of crystallized material. Structural characterization has been performed by X-ray Diffraction. Increasing the radiation energy densities up to 220 mJ/cm
2 crystallites sizes up to 750 Å have been obtained.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Gas lasers including excimer and metal-vapor lasers</subject><subject>Hydrogenated amorphous silicon</subject><subject>Laser irradiation</subject><subject>Lasers</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optics</subject><subject>Physics</subject><subject>Polymers</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>X-ray diffraction</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKsfwNte9LbrJNlNGjxJ8R8UvOjBU8hmE0xJd2tmK9ZPb0oL3rzMwPDem5kfIZcUKgpU3CyrEX3FAJoKaAW8OSITOpOqZJLTYzIBqKEUoOCUnCEuAYAyxifk_f7bhpVLRTSYa-i7jXVdYdMWRxNj-DFjGPpi8IVZDWn9MWywwBCD3Q37wkf3HdroivUQt7sY3LQ4JjM6PCcn3kR0F4c-JW8P96_zp3Lx8vg8v1uUtmb1WDLDQQgnGyN5DZI11ktlVcfZTLVedFCztmkpbawQTIqZqo30nFJuTUuFBD4l1_vcdRo-Nw5HvQpoXYymd_lazWbZyKjKQroX2jQgJuf1OoWVSVtNQe8g6qXOEPUOogaqM8TsuTqEG7Qm-mR6G_DPKIEppXjW3e51Ln_6FVzSaIPrM8qQnB11N4R_tvwCqbOHxQ</recordid><startdate>20050901</startdate><enddate>20050901</enddate><creator>Imparato, Antonio</creator><creator>Minarini, Carla</creator><creator>Rubino, Alfredo</creator><creator>Tassini, Paolo</creator><creator>Villani, Fulvia</creator><creator>Della Sala, Dario</creator><creator>Amendola, Eugenio</creator><creator>Kunst, Marinus</creator><creator>Neitzert, Heinz-Christoph</creator><creator>Bellone, Salvatore</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20050901</creationdate><title>Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates</title><author>Imparato, Antonio ; Minarini, Carla ; Rubino, Alfredo ; Tassini, Paolo ; Villani, Fulvia ; Della Sala, Dario ; Amendola, Eugenio ; Kunst, Marinus ; Neitzert, Heinz-Christoph ; Bellone, Salvatore</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c424t-2a3066e75a7340725cf79c9d3289bf6d042b5b115c66276894a7f3113cab16703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Gas lasers including excimer and metal-vapor lasers</topic><topic>Hydrogenated amorphous silicon</topic><topic>Laser irradiation</topic><topic>Lasers</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optics</topic><topic>Physics</topic><topic>Polymers</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Imparato, Antonio</creatorcontrib><creatorcontrib>Minarini, Carla</creatorcontrib><creatorcontrib>Rubino, Alfredo</creatorcontrib><creatorcontrib>Tassini, Paolo</creatorcontrib><creatorcontrib>Villani, Fulvia</creatorcontrib><creatorcontrib>Della Sala, Dario</creatorcontrib><creatorcontrib>Amendola, Eugenio</creatorcontrib><creatorcontrib>Kunst, Marinus</creatorcontrib><creatorcontrib>Neitzert, Heinz-Christoph</creatorcontrib><creatorcontrib>Bellone, Salvatore</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Imparato, Antonio</au><au>Minarini, Carla</au><au>Rubino, Alfredo</au><au>Tassini, Paolo</au><au>Villani, Fulvia</au><au>Della Sala, Dario</au><au>Amendola, Eugenio</au><au>Kunst, Marinus</au><au>Neitzert, Heinz-Christoph</au><au>Bellone, Salvatore</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates</atitle><jtitle>Thin solid films</jtitle><date>2005-09-01</date><risdate>2005</risdate><volume>487</volume><issue>1</issue><spage>58</spage><epage>62</epage><pages>58-62</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Laser crystallization of a-Si:H on PES, PET and AryLite™ polymer substrates is reported. For each material, the glass transition temperature
T
g and the coefficient of thermal expansion have been evaluated, to determine the optimum deposition and crystallization processes conditions. 1000-Å thick intrinsic amorphous silicon films have been deposited on the substrates by Plasma Enhanced Chemical Vapour Deposition in the temperature range of 120–250°C. Dehydrogenation and crystallization have been obtained by high energy (10 J) XeCl pulsed excimer laser. The irradiation conditions have been varied to study their influence on the electrical and optical properties of crystallized material. Structural characterization has been performed by X-ray Diffraction. Increasing the radiation energy densities up to 220 mJ/cm
2 crystallites sizes up to 750 Å have been obtained.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.01.035</doi><tpages>5</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Fundamental areas of phenomenology (including applications) Gas lasers including excimer and metal-vapor lasers Hydrogenated amorphous silicon Laser irradiation Lasers Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optics Physics Polymers Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) X-ray diffraction |
| title | Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates |
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