Stacked niobium Josephson junction arrays under x-band irradiation
Stacked Josephson junction arrays located at the rf current antinodes of a superconducting microstripline resonator were investigated. The circuits were designed to obtain highly accurate voltages at cm-waveband microwave driving and low rf-power level. Nb-Al/AlO/sub x/-Nb Josephson junctions with t...
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| Veröffentlicht in: | IEEE transactions on applied superconductivity 1997-06, Vol.7 (2), p.2423-2425 |
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| container_title | IEEE transactions on applied superconductivity |
| container_volume | 7 |
| creator | Klushin, A.M. Schornstein, S. Kohlstedt, H. Wende, G. Thrum, F. Meyer, H.-G. |
| description | Stacked Josephson junction arrays located at the rf current antinodes of a superconducting microstripline resonator were investigated. The circuits were designed to obtain highly accurate voltages at cm-waveband microwave driving and low rf-power level. Nb-Al/AlO/sub x/-Nb Josephson junctions with tunneling area of 60 /spl mu/m/spl times/300 /spl mu/m and critical current density up to 7 A/cm/sup 2/ were used. We compared the average voltages of the rf induced maximal current steps in arrays with up to three junctions per stack. Quantized current steps up to 300 mV were observed under microwave irradiation at frequency of 19.20 GHz in circuits with 384 three-junction stacks. The dynamics of stacked tunnel junctions in the presence of rf-currents will be discussed with respect to application as voltage standards. |
| doi_str_mv | 10.1109/77.621729 |
| format | Article |
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The circuits were designed to obtain highly accurate voltages at cm-waveband microwave driving and low rf-power level. Nb-Al/AlO/sub x/-Nb Josephson junctions with tunneling area of 60 /spl mu/m/spl times/300 /spl mu/m and critical current density up to 7 A/cm/sup 2/ were used. We compared the average voltages of the rf induced maximal current steps in arrays with up to three junctions per stack. Quantized current steps up to 300 mV were observed under microwave irradiation at frequency of 19.20 GHz in circuits with 384 three-junction stacks. The dynamics of stacked tunnel junctions in the presence of rf-currents will be discussed with respect to application as voltage standards.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/77.621729</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Critical current density ; Electronics ; Exact sciences and technology ; Frequency ; Josephson junctions ; Microstrip antenna arrays ; Microstrip resonators ; Microwave circuits ; Niobium ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The circuits were designed to obtain highly accurate voltages at cm-waveband microwave driving and low rf-power level. Nb-Al/AlO/sub x/-Nb Josephson junctions with tunneling area of 60 /spl mu/m/spl times/300 /spl mu/m and critical current density up to 7 A/cm/sup 2/ were used. We compared the average voltages of the rf induced maximal current steps in arrays with up to three junctions per stack. Quantized current steps up to 300 mV were observed under microwave irradiation at frequency of 19.20 GHz in circuits with 384 three-junction stacks. The dynamics of stacked tunnel junctions in the presence of rf-currents will be discussed with respect to application as voltage standards.</description><subject>Applied sciences</subject><subject>Critical current density</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Josephson junctions</subject><subject>Microstrip antenna arrays</subject><subject>Microstrip resonators</subject><subject>Microwave circuits</subject><subject>Niobium</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Superconducting devices</subject><subject>Superconducting microwave devices</subject><subject>Tunneling</subject><subject>Voltage</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo9kL1PwzAUxC0EEqUwsDJlQEgMKc92bMcjVHyqEgMwR479LFzSpNiNRP97UqXq9E7vfnfDEXJJYUYp6DulZpJRxfQRmVAhypwJKo4HDYLmJWP8lJyltASgRVmICXn42Bj7gy5rQ1eHfpW9dQnX36lrs2Xf2k0YhInRbFPWtw5j9pfXpnVZGH4umJ1_Tk68aRJe7O-UfD09fs5f8sX78-v8fpFbDnKTW-m4Vk4wxVzthQVtuafcKw8aa-8lyoJJhoAKbAG81lpJNNrV1EjqHZ-Sm7F3HbvfHtOmWoVksWlMi12fKlZKSXkpB_B2BG3sUoroq3UMKxO3FYVqt1KlVDWuNLDX-1KTrGl8NK0N6RBgJWiAHXY1YgERD-6-4x-X3G8j</recordid><startdate>19970601</startdate><enddate>19970601</enddate><creator>Klushin, A.M.</creator><creator>Schornstein, S.</creator><creator>Kohlstedt, H.</creator><creator>Wende, G.</creator><creator>Thrum, F.</creator><creator>Meyer, H.-G.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19970601</creationdate><title>Stacked niobium Josephson junction arrays under x-band irradiation</title><author>Klushin, A.M. ; Schornstein, S. ; Kohlstedt, H. ; Wende, G. ; Thrum, F. ; Meyer, H.-G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-c6d397d5272dbf5c09c3f13f7f09ebff6e64262e0e70c403b9976ea9db1a61fd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Applied sciences</topic><topic>Critical current density</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>Josephson junctions</topic><topic>Microstrip antenna arrays</topic><topic>Microstrip resonators</topic><topic>Microwave circuits</topic><topic>Niobium</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Superconducting devices</topic><topic>Superconducting microwave devices</topic><topic>Tunneling</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Klushin, A.M.</creatorcontrib><creatorcontrib>Schornstein, S.</creatorcontrib><creatorcontrib>Kohlstedt, H.</creatorcontrib><creatorcontrib>Wende, G.</creatorcontrib><creatorcontrib>Thrum, F.</creatorcontrib><creatorcontrib>Meyer, H.-G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Klushin, A.M.</au><au>Schornstein, S.</au><au>Kohlstedt, H.</au><au>Wende, G.</au><au>Thrum, F.</au><au>Meyer, H.-G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stacked niobium Josephson junction arrays under x-band irradiation</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>1997-06-01</date><risdate>1997</risdate><volume>7</volume><issue>2</issue><spage>2423</spage><epage>2425</epage><pages>2423-2425</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>Stacked Josephson junction arrays located at the rf current antinodes of a superconducting microstripline resonator were investigated. The circuits were designed to obtain highly accurate voltages at cm-waveband microwave driving and low rf-power level. Nb-Al/AlO/sub x/-Nb Josephson junctions with tunneling area of 60 /spl mu/m/spl times/300 /spl mu/m and critical current density up to 7 A/cm/sup 2/ were used. We compared the average voltages of the rf induced maximal current steps in arrays with up to three junctions per stack. Quantized current steps up to 300 mV were observed under microwave irradiation at frequency of 19.20 GHz in circuits with 384 three-junction stacks. The dynamics of stacked tunnel junctions in the presence of rf-currents will be discussed with respect to application as voltage standards.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/77.621729</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1051-8223 |
| ispartof | IEEE transactions on applied superconductivity, 1997-06, Vol.7 (2), p.2423-2425 |
| issn | 1051-8223 1558-2515 |
| language | eng |
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| source | IEEE Electronic Library Online |
| subjects | Applied sciences Critical current density Electronics Exact sciences and technology Frequency Josephson junctions Microstrip antenna arrays Microstrip resonators Microwave circuits Niobium Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Superconducting devices Superconducting microwave devices Tunneling Voltage |
| title | Stacked niobium Josephson junction arrays under x-band irradiation |
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