Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors
This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage an...
Gespeichert in:
| Veröffentlicht in: | Thin solid films 2004-11, Vol.467 (1), p.215-219 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 219 |
|---|---|
| container_issue | 1 |
| container_start_page | 215 |
| container_title | Thin solid films |
| container_volume | 467 |
| creator | Wang, Yu-Wu Cheng, Horng-Long Wang, Yi-Kai Hu, Tang-Hsiang Ho, Jia-Chong Lee, Cheng-Chung Lei, Tan-Fu Yeh, Ching-Fa |
| description | This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport. |
| doi_str_mv | 10.1016/j.tsf.2004.04.001 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28655483</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609004003967</els_id><sourcerecordid>28655483</sourcerecordid><originalsourceid>FETCH-LOGICAL-c453t-b895eec7976504058fb3c50178c3a81a8758b4933241de938a1203969862fe603</originalsourceid><addsrcrecordid>eNqNkU1LAzEQhoMoWKs_wFsuetuaj81uFk8ifoHgRc8hTSeasputmVTw35ulBW8iDOQwzzszeV9CzjlbcMabq_Uio18IxurFVIwfkBnXbVeJVvJDMisNVjWsY8fkBHHNCiGEnJHhKfp-C9EBHT0dwOI2hfhOIX6FNMYBYqZjpPkDKPTgcgrO9tR92GRdhhQwB4eTdFNI6yBCtbQIq6IIkfrQDzQnG7GAY8JTcuRtj3C2f-fk7f7u9faxen55eLq9ea5crWSulrpTAK7t2kaVu5X2S-kU46120mpudav0su6kFDVfQSe15YLJrul0Izw0TM7J5W7uJo2fW8BshoAO-t5GGLdohG6UqrX8BygUV5oXkO9Al0bEBN5sUhhs-jacmSkBszYlATMlYKZik-ZiP9xicc0XH1zAX2HDBW_Lh-fkesdBseQrQDLowhTJKqRiuVmN4Y8tP_n9m_w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28251581</pqid></control><display><type>article</type><title>Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors</title><source>Access via ScienceDirect (Elsevier)</source><creator>Wang, Yu-Wu ; Cheng, Horng-Long ; Wang, Yi-Kai ; Hu, Tang-Hsiang ; Ho, Jia-Chong ; Lee, Cheng-Chung ; Lei, Tan-Fu ; Yeh, Ching-Fa</creator><creatorcontrib>Wang, Yu-Wu ; Cheng, Horng-Long ; Wang, Yi-Kai ; Hu, Tang-Hsiang ; Ho, Jia-Chong ; Lee, Cheng-Chung ; Lei, Tan-Fu ; Yeh, Ching-Fa</creatorcontrib><description>This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2004.04.001</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity of specific materials ; Electrical properties and measurements ; Electronic devices ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in condensed matter ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Low-field transport and mobility; piezoresistance ; Organic semiconductors ; Physics ; Polymers; organic compounds (including organic semiconductors)</subject><ispartof>Thin solid films, 2004-11, Vol.467 (1), p.215-219</ispartof><rights>2004 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c453t-b895eec7976504058fb3c50178c3a81a8758b4933241de938a1203969862fe603</citedby><cites>FETCH-LOGICAL-c453t-b895eec7976504058fb3c50178c3a81a8758b4933241de938a1203969862fe603</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2004.04.001$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16121745$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, Yu-Wu</creatorcontrib><creatorcontrib>Cheng, Horng-Long</creatorcontrib><creatorcontrib>Wang, Yi-Kai</creatorcontrib><creatorcontrib>Hu, Tang-Hsiang</creatorcontrib><creatorcontrib>Ho, Jia-Chong</creatorcontrib><creatorcontrib>Lee, Cheng-Chung</creatorcontrib><creatorcontrib>Lei, Tan-Fu</creatorcontrib><creatorcontrib>Yeh, Ching-Fa</creatorcontrib><title>Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors</title><title>Thin solid films</title><description>This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity of specific materials</subject><subject>Electrical properties and measurements</subject><subject>Electronic devices</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in condensed matter</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Organic semiconductors</subject><subject>Physics</subject><subject>Polymers; organic compounds (including organic semiconductors)</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqNkU1LAzEQhoMoWKs_wFsuetuaj81uFk8ifoHgRc8hTSeasputmVTw35ulBW8iDOQwzzszeV9CzjlbcMabq_Uio18IxurFVIwfkBnXbVeJVvJDMisNVjWsY8fkBHHNCiGEnJHhKfp-C9EBHT0dwOI2hfhOIX6FNMYBYqZjpPkDKPTgcgrO9tR92GRdhhQwB4eTdFNI6yBCtbQIq6IIkfrQDzQnG7GAY8JTcuRtj3C2f-fk7f7u9faxen55eLq9ea5crWSulrpTAK7t2kaVu5X2S-kU46120mpudav0su6kFDVfQSe15YLJrul0Izw0TM7J5W7uJo2fW8BshoAO-t5GGLdohG6UqrX8BygUV5oXkO9Al0bEBN5sUhhs-jacmSkBszYlATMlYKZik-ZiP9xicc0XH1zAX2HDBW_Lh-fkesdBseQrQDLowhTJKqRiuVmN4Y8tP_n9m_w</recordid><startdate>20041122</startdate><enddate>20041122</enddate><creator>Wang, Yu-Wu</creator><creator>Cheng, Horng-Long</creator><creator>Wang, Yi-Kai</creator><creator>Hu, Tang-Hsiang</creator><creator>Ho, Jia-Chong</creator><creator>Lee, Cheng-Chung</creator><creator>Lei, Tan-Fu</creator><creator>Yeh, Ching-Fa</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope></search><sort><creationdate>20041122</creationdate><title>Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors</title><author>Wang, Yu-Wu ; Cheng, Horng-Long ; Wang, Yi-Kai ; Hu, Tang-Hsiang ; Ho, Jia-Chong ; Lee, Cheng-Chung ; Lei, Tan-Fu ; Yeh, Ching-Fa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c453t-b895eec7976504058fb3c50178c3a81a8758b4933241de938a1203969862fe603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity of specific materials</topic><topic>Electrical properties and measurements</topic><topic>Electronic devices</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in condensed matter</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Organic semiconductors</topic><topic>Physics</topic><topic>Polymers; organic compounds (including organic semiconductors)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Yu-Wu</creatorcontrib><creatorcontrib>Cheng, Horng-Long</creatorcontrib><creatorcontrib>Wang, Yi-Kai</creatorcontrib><creatorcontrib>Hu, Tang-Hsiang</creatorcontrib><creatorcontrib>Ho, Jia-Chong</creatorcontrib><creatorcontrib>Lee, Cheng-Chung</creatorcontrib><creatorcontrib>Lei, Tan-Fu</creatorcontrib><creatorcontrib>Yeh, Ching-Fa</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Yu-Wu</au><au>Cheng, Horng-Long</au><au>Wang, Yi-Kai</au><au>Hu, Tang-Hsiang</au><au>Ho, Jia-Chong</au><au>Lee, Cheng-Chung</au><au>Lei, Tan-Fu</au><au>Yeh, Ching-Fa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors</atitle><jtitle>Thin solid films</jtitle><date>2004-11-22</date><risdate>2004</risdate><volume>467</volume><issue>1</issue><spage>215</spage><epage>219</epage><pages>215-219</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2004.04.001</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2004-11, Vol.467 (1), p.215-219 |
| issn | 0040-6090 1879-2731 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28655483 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity of specific materials Electrical properties and measurements Electronic devices Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in condensed matter Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Low-field transport and mobility piezoresistance Organic semiconductors Physics Polymers organic compounds (including organic semiconductors) |
| title | Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T13%3A05%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20measuring%20environment%20on%20the%20electrical%20characteristics%20of%20pentacene-based%20thin%20film%20transistors&rft.jtitle=Thin%20solid%20films&rft.au=Wang,%20Yu-Wu&rft.date=2004-11-22&rft.volume=467&rft.issue=1&rft.spage=215&rft.epage=219&rft.pages=215-219&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/j.tsf.2004.04.001&rft_dat=%3Cproquest_cross%3E28655483%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28251581&rft_id=info:pmid/&rft_els_id=S0040609004003967&rfr_iscdi=true |