In situ FTIR investigation of the effect of gas-phase reaction on the deposition of Pb(Zr,Ti)O3 films by MOCVD
The effect of gas-phase reaction on the deposition of Pb(Zr,Ti)O3 films by metal organic chemical vapor deposition (MOCVD) was in situ investigated by Fourier Transform Infrared (FTIR) spectroscopy. Pb(C11H19O2)2, Zr(O.t-C4H9)4, and Ti(O.i-C3H7)4 were used as source gases, which was widely investiga...
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| Veröffentlicht in: | Thin solid films 2006-03, Vol.498 (1-2), p.277-281 |
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| creator | ASANO, Gouji SATAKE, Tsukasa OHTSUKI, Kunio FUNAKUBO, Hiroshi |
| description | The effect of gas-phase reaction on the deposition of Pb(Zr,Ti)O3 films by metal organic chemical vapor deposition (MOCVD) was in situ investigated by Fourier Transform Infrared (FTIR) spectroscopy. Pb(C11H19O2)2, Zr(O.t-C4H9)4, and Ti(O.i-C3H7)4 were used as source gases, which was widely investigated for MOCVD-Pb(Zr,Ti)O3 deposition. We investigated various source-gas combinations and detected a gas-phase reaction in the mixtures containing Zr source gas. Moreover, the deposition rates of the Zr and Ti oxides in the films were found to be determined by the actual source gas concentration after gas-phase reaction and could be controlled by the absorbance spectrum intensities of the Zr and Ti source gases. In contrast, the deposition rate of the Pb oxide was mainly determined by the surface reaction on the substrate for making PZT single phase. |
| doi_str_mv | 10.1016/j.tsf.2005.07.126 |
| format | Article |
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Pb(C11H19O2)2, Zr(O.t-C4H9)4, and Ti(O.i-C3H7)4 were used as source gases, which was widely investigated for MOCVD-Pb(Zr,Ti)O3 deposition. We investigated various source-gas combinations and detected a gas-phase reaction in the mixtures containing Zr source gas. Moreover, the deposition rates of the Zr and Ti oxides in the films were found to be determined by the actual source gas concentration after gas-phase reaction and could be controlled by the absorbance spectrum intensities of the Zr and Ti source gases. 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Pb(C11H19O2)2, Zr(O.t-C4H9)4, and Ti(O.i-C3H7)4 were used as source gases, which was widely investigated for MOCVD-Pb(Zr,Ti)O3 deposition. We investigated various source-gas combinations and detected a gas-phase reaction in the mixtures containing Zr source gas. Moreover, the deposition rates of the Zr and Ti oxides in the films were found to be determined by the actual source gas concentration after gas-phase reaction and could be controlled by the absorbance spectrum intensities of the Zr and Ti source gases. 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Pb(C11H19O2)2, Zr(O.t-C4H9)4, and Ti(O.i-C3H7)4 were used as source gases, which was widely investigated for MOCVD-Pb(Zr,Ti)O3 deposition. We investigated various source-gas combinations and detected a gas-phase reaction in the mixtures containing Zr source gas. Moreover, the deposition rates of the Zr and Ti oxides in the films were found to be determined by the actual source gas concentration after gas-phase reaction and could be controlled by the absorbance spectrum intensities of the Zr and Ti source gases. In contrast, the deposition rate of the Pb oxide was mainly determined by the surface reaction on the substrate for making PZT single phase.</abstract><cop>Lausanne</cop><pub>Elsevier Science</pub><doi>10.1016/j.tsf.2005.07.126</doi><tpages>5</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Niobates, titanates, tantalates, pzt ceramics, etc Physics |
| title | In situ FTIR investigation of the effect of gas-phase reaction on the deposition of Pb(Zr,Ti)O3 films by MOCVD |
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