Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation
Solid-state self-powered UV detection is strongly required in various application fields to enable long-term operation. However, this requirement is incompatible with conventionally used metal-semiconductor-metal (MSM) UV photodetectors (PDs) due to the symmetric design of Schottky contacts. In this...
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| Veröffentlicht in: | Optics letters 2023-09, Vol.48 (18), p.4769 |
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| container_title | Optics letters |
| container_volume | 48 |
| creator | Guo, Chenyu Zhang, Jiaxin Xia, Shihong Deng, Liqiong Liu, Kunzi Yang, Zhenhai Cheng, Bin Sarkar, Biplab Guo, Wei Ye, Jichun |
| description | Solid-state self-powered UV detection is strongly required in various application fields to enable long-term operation. However, this requirement is incompatible with conventionally used metal-semiconductor-metal (MSM) UV photodetectors (PDs) due to the symmetric design of Schottky contacts. In this work, a self-powered MSM solar-blind UV-PD was realized using a lateral pn junction architecture. A large built-in electric field was obtained in the MSM-type UV-PD without impurity doping, leading to efficiency carrier separation and enhanced photoresponsivity at zero external bias. The solar-blind UV-PD exhibits a cutoff wavelength of 280 nm, a photo/dark current ratio of over 10
5
, and a responsivity of 425.13 mA/W at −10 V. The mechanism of self-powered UV photodetection was further investigated by TCAD simulation of the internal electric field and carrier distributions. |
| doi_str_mv | 10.1364/OL.500391 |
| format | Article |
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5
, and a responsivity of 425.13 mA/W at −10 V. The mechanism of self-powered UV photodetection was further investigated by TCAD simulation of the internal electric field and carrier distributions.</description><identifier>ISSN: 0146-9592</identifier><identifier>ISSN: 1539-4794</identifier><identifier>EISSN: 1539-4794</identifier><identifier>DOI: 10.1364/OL.500391</identifier><language>eng</language><publisher>Washington: Optical Society of America</publisher><subject>Aluminum gallium nitrides ; Cut off wavelength ; Dark current ; Electric contacts ; Electric fields ; Linear polarization ; P-n junctions ; Photometers ; Polarization modulation</subject><ispartof>Optics letters, 2023-09, Vol.48 (18), p.4769</ispartof><rights>Copyright Optical Society of America Sep 15, 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c290t-f0ea503389e9d7074fc2d4abfd83b89a7c2925d9ad6a5ebe347dbcef96efe71e3</citedby><cites>FETCH-LOGICAL-c290t-f0ea503389e9d7074fc2d4abfd83b89a7c2925d9ad6a5ebe347dbcef96efe71e3</cites><orcidid>0000-0002-6233-0529 ; 0000-0002-0429-972X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,3245,27903,27904</link.rule.ids></links><search><creatorcontrib>Guo, Chenyu</creatorcontrib><creatorcontrib>Zhang, Jiaxin</creatorcontrib><creatorcontrib>Xia, Shihong</creatorcontrib><creatorcontrib>Deng, Liqiong</creatorcontrib><creatorcontrib>Liu, Kunzi</creatorcontrib><creatorcontrib>Yang, Zhenhai</creatorcontrib><creatorcontrib>Cheng, Bin</creatorcontrib><creatorcontrib>Sarkar, Biplab</creatorcontrib><creatorcontrib>Guo, Wei</creatorcontrib><creatorcontrib>Ye, Jichun</creatorcontrib><title>Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation</title><title>Optics letters</title><description>Solid-state self-powered UV detection is strongly required in various application fields to enable long-term operation. However, this requirement is incompatible with conventionally used metal-semiconductor-metal (MSM) UV photodetectors (PDs) due to the symmetric design of Schottky contacts. In this work, a self-powered MSM solar-blind UV-PD was realized using a lateral pn junction architecture. A large built-in electric field was obtained in the MSM-type UV-PD without impurity doping, leading to efficiency carrier separation and enhanced photoresponsivity at zero external bias. The solar-blind UV-PD exhibits a cutoff wavelength of 280 nm, a photo/dark current ratio of over 10
5
, and a responsivity of 425.13 mA/W at −10 V. The mechanism of self-powered UV photodetection was further investigated by TCAD simulation of the internal electric field and carrier distributions.</description><subject>Aluminum gallium nitrides</subject><subject>Cut off wavelength</subject><subject>Dark current</subject><subject>Electric contacts</subject><subject>Electric fields</subject><subject>Linear polarization</subject><subject>P-n junctions</subject><subject>Photometers</subject><subject>Polarization modulation</subject><issn>0146-9592</issn><issn>1539-4794</issn><issn>1539-4794</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpd0D1PwzAQBmALgUQpDPwDSywwuNix8-GxqqAgpXQojChy4rNI5cbBToTaX0_SMjHdDc-dXr0I3TI6YzwRj-t8FlPKJTtDExZzSUQqxTmaUCYSImMZXaKrELaU0iTlfII-N2ANad0PeNB4tVnh4KzypLR1o_HcLtUbbr9c5zR0UHXOYw_K1ocBl3tcN6S1qgHcjkf1QXW1a_DO6d4e12t0YZQNcPM3p-jj-el98ULy9fJ1Mc9JFUnaEUNBxZTzTILUKU2FqSItVGl0xstMqnRgUayl0omKoQQuUl1WYGQCBlIGfIruT39b7757CF2xq0MFdszm-lBEWSIyGWdUDPTuH9263jdDulEljAp5VA8nVXkXggdTtL7eKb8vGC3Goot1XpyK5r9pfHEj</recordid><startdate>20230915</startdate><enddate>20230915</enddate><creator>Guo, Chenyu</creator><creator>Zhang, Jiaxin</creator><creator>Xia, Shihong</creator><creator>Deng, Liqiong</creator><creator>Liu, Kunzi</creator><creator>Yang, Zhenhai</creator><creator>Cheng, Bin</creator><creator>Sarkar, Biplab</creator><creator>Guo, Wei</creator><creator>Ye, Jichun</creator><general>Optical Society of America</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-6233-0529</orcidid><orcidid>https://orcid.org/0000-0002-0429-972X</orcidid></search><sort><creationdate>20230915</creationdate><title>Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation</title><author>Guo, Chenyu ; Zhang, Jiaxin ; Xia, Shihong ; Deng, Liqiong ; Liu, Kunzi ; Yang, Zhenhai ; Cheng, Bin ; Sarkar, Biplab ; Guo, Wei ; Ye, Jichun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c290t-f0ea503389e9d7074fc2d4abfd83b89a7c2925d9ad6a5ebe347dbcef96efe71e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Aluminum gallium nitrides</topic><topic>Cut off wavelength</topic><topic>Dark current</topic><topic>Electric contacts</topic><topic>Electric fields</topic><topic>Linear polarization</topic><topic>P-n junctions</topic><topic>Photometers</topic><topic>Polarization modulation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Guo, Chenyu</creatorcontrib><creatorcontrib>Zhang, Jiaxin</creatorcontrib><creatorcontrib>Xia, Shihong</creatorcontrib><creatorcontrib>Deng, Liqiong</creatorcontrib><creatorcontrib>Liu, Kunzi</creatorcontrib><creatorcontrib>Yang, Zhenhai</creatorcontrib><creatorcontrib>Cheng, Bin</creatorcontrib><creatorcontrib>Sarkar, Biplab</creatorcontrib><creatorcontrib>Guo, Wei</creatorcontrib><creatorcontrib>Ye, Jichun</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Optics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Guo, Chenyu</au><au>Zhang, Jiaxin</au><au>Xia, Shihong</au><au>Deng, Liqiong</au><au>Liu, Kunzi</au><au>Yang, Zhenhai</au><au>Cheng, Bin</au><au>Sarkar, Biplab</au><au>Guo, Wei</au><au>Ye, Jichun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation</atitle><jtitle>Optics letters</jtitle><date>2023-09-15</date><risdate>2023</risdate><volume>48</volume><issue>18</issue><spage>4769</spage><pages>4769-</pages><issn>0146-9592</issn><issn>1539-4794</issn><eissn>1539-4794</eissn><abstract>Solid-state self-powered UV detection is strongly required in various application fields to enable long-term operation. However, this requirement is incompatible with conventionally used metal-semiconductor-metal (MSM) UV photodetectors (PDs) due to the symmetric design of Schottky contacts. In this work, a self-powered MSM solar-blind UV-PD was realized using a lateral pn junction architecture. A large built-in electric field was obtained in the MSM-type UV-PD without impurity doping, leading to efficiency carrier separation and enhanced photoresponsivity at zero external bias. The solar-blind UV-PD exhibits a cutoff wavelength of 280 nm, a photo/dark current ratio of over 10
5
, and a responsivity of 425.13 mA/W at −10 V. The mechanism of self-powered UV photodetection was further investigated by TCAD simulation of the internal electric field and carrier distributions.</abstract><cop>Washington</cop><pub>Optical Society of America</pub><doi>10.1364/OL.500391</doi><orcidid>https://orcid.org/0000-0002-6233-0529</orcidid><orcidid>https://orcid.org/0000-0002-0429-972X</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0146-9592 |
| ispartof | Optics letters, 2023-09, Vol.48 (18), p.4769 |
| issn | 0146-9592 1539-4794 1539-4794 |
| language | eng |
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| source | Optica Publishing Group Journals |
| subjects | Aluminum gallium nitrides Cut off wavelength Dark current Electric contacts Electric fields Linear polarization P-n junctions Photometers Polarization modulation |
| title | Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation |
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