Study of the defects induced in N-type silicon irradiated by 1-3 MeV protons

Study of the defects induced in N-type silicon irradiated by 1-3 MeV protons

The electrical properties of semiconductor components can be greatly modified by proton implantation. Spreading resistance, C-V (capacitance voltage) and DLTS (deep levels transient spectroscopy) measurements have been used to characterize N-type silicon irradiated by MeV proton at fluences up to 10...

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Veröffentlicht in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1994-12, Vol.41 (6), p.1932-1936
Hauptverfasser: Ntsoenzok, E., Barbot, J.F., Desgardin, P., Vernois, J., Blanchard, C., Isabelle, D.B.
Format: Artikel
Sprache:eng
Schlagworte:
440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems
ANNEALING
Applied sciences
Capacitance measurement
Capacitance-voltage characteristics
CARRIER LIFETIME
Conductivity
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
Electric resistance
Electrical resistance measurement
Electronics
ELEMENTS
Exact sciences and technology
HEAT TREATMENTS
Hydrogen
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ION IMPLANTATION
LIFETIME
MATERIALS SCIENCE
PHYSICAL RADIATION EFFECTS
Protons
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS 360605 > Materials-- Radiation Effects
SILICON
Spectroscopy
Testing, measurement, noise and reliability
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Beschreibung
Zusammenfassung:The electrical properties of semiconductor components can be greatly modified by proton implantation. Spreading resistance, C-V (capacitance voltage) and DLTS (deep levels transient spectroscopy) measurements have been used to characterize N-type silicon irradiated by MeV proton at fluences up to 10/sup 14/p/sup +/cm/sup -2/. The greatest drawback induced by proton implantation is the overdoping effect which can strongly reduce device efficiency. The present work reports this effect in both annealed and unannealed samples.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.340526