Ta–Ru–N diffusion barriers for high-temperature contacts to p-type SiC
A new diffusion barrier, Ta–Ru–N, has been tested on ohmic contacts to p +-4H–SiC aged at 350 °C in air. Specific contact resistance measurements combined with X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to evaluate the barriers. Upon aging, all ohm...
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| Veröffentlicht in: | Thin solid films 2005-08, Vol.485 (1), p.207-211 |
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| container_title | Thin solid films |
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| creator | Eichfeld, C.M. Horsey, M.A. Mohney, S.E. Adedeji, A.V. Williams, J.R. |
| description | A new diffusion barrier, Ta–Ru–N, has been tested on ohmic contacts to
p
+-4H–SiC aged at 350 °C in air. Specific contact resistance measurements combined with X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to evaluate the barriers. Upon aging, all ohmic contacts exhibited an initial change in resistance but stabilized within 100 h, with many samples surviving for 2000 h (the longest time tested). The Ru
:
Ta ratio in the barriers must be sufficiently high to obtain a long-lived barrier in air. Specific contact resistances as low as 3
×
10
−
5
Ω cm
2 were maintained after 2000 h of aging. |
| doi_str_mv | 10.1016/j.tsf.2005.04.005 |
| format | Article |
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p
+-4H–SiC aged at 350 °C in air. Specific contact resistance measurements combined with X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to evaluate the barriers. Upon aging, all ohmic contacts exhibited an initial change in resistance but stabilized within 100 h, with many samples surviving for 2000 h (the longest time tested). The Ru
:
Ta ratio in the barriers must be sufficiently high to obtain a long-lived barrier in air. Specific contact resistances as low as 3
×
10
−
5
Ω cm
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p
+-4H–SiC aged at 350 °C in air. Specific contact resistance measurements combined with X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to evaluate the barriers. Upon aging, all ohmic contacts exhibited an initial change in resistance but stabilized within 100 h, with many samples surviving for 2000 h (the longest time tested). The Ru
:
Ta ratio in the barriers must be sufficiently high to obtain a long-lived barrier in air. Specific contact resistances as low as 3
×
10
−
5
Ω cm
2 were maintained after 2000 h of aging.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Diffusion barrier</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Ohmic contact</subject><subject>Physics</subject><subject>SiC</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Ta–Ru–N</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kE1OwzAQhS0EEqVwAHbZwC5hnD_HYoUqflWBBGVtOc6YukqTYDtI3XEHbshJcFUkdsxi3ua9N5qPkFMKCQVaXqwS73SSAhQJ5EmQPTKhFeNxyjK6TyYAOcQlcDgkR86tAICmaTYhDwv5_fn1PIb1GDVG69GZvotqaa1B6yLd22hp3paxx_WAVvrRYqT6zkvlXeT7aIj9ZsDoxcyOyYGWrcOTX52S15vrxewunj_d3s-u5rHKisrHNW2qMmOZZrzRVQGIDJBpBlUjCyolLSBFXuuCFgWvmcy55kzlMviYrIFmU3K-6x1s_z6i82JtnMK2lR32oxNpVeZhIBjpzqhs75xFLQZr1tJuBAWxpSZWIlATW2oCchEkZM5-y6VTstVWdsq4v2DJM875tvty58Pw6UdAJZwy2ClsjEXlRdObf678AFKmg8c</recordid><startdate>20050801</startdate><enddate>20050801</enddate><creator>Eichfeld, C.M.</creator><creator>Horsey, M.A.</creator><creator>Mohney, S.E.</creator><creator>Adedeji, A.V.</creator><creator>Williams, J.R.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050801</creationdate><title>Ta–Ru–N diffusion barriers for high-temperature contacts to p-type SiC</title><author>Eichfeld, C.M. ; Horsey, M.A. ; Mohney, S.E. ; Adedeji, A.V. ; Williams, J.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-b1d86373f79df850ee70e7f708da51aa1502e9bf51559b7a49f97c4aee77ab013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Diffusion barrier</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Ohmic contact</topic><topic>Physics</topic><topic>SiC</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Ta–Ru–N</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Eichfeld, C.M.</creatorcontrib><creatorcontrib>Horsey, M.A.</creatorcontrib><creatorcontrib>Mohney, S.E.</creatorcontrib><creatorcontrib>Adedeji, A.V.</creatorcontrib><creatorcontrib>Williams, J.R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Eichfeld, C.M.</au><au>Horsey, M.A.</au><au>Mohney, S.E.</au><au>Adedeji, A.V.</au><au>Williams, J.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ta–Ru–N diffusion barriers for high-temperature contacts to p-type SiC</atitle><jtitle>Thin solid films</jtitle><date>2005-08-01</date><risdate>2005</risdate><volume>485</volume><issue>1</issue><spage>207</spage><epage>211</epage><pages>207-211</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>A new diffusion barrier, Ta–Ru–N, has been tested on ohmic contacts to
p
+-4H–SiC aged at 350 °C in air. Specific contact resistance measurements combined with X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to evaluate the barriers. Upon aging, all ohmic contacts exhibited an initial change in resistance but stabilized within 100 h, with many samples surviving for 2000 h (the longest time tested). The Ru
:
Ta ratio in the barriers must be sufficiently high to obtain a long-lived barrier in air. Specific contact resistances as low as 3
×
10
−
5
Ω cm
2 were maintained after 2000 h of aging.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.04.005</doi><tpages>5</tpages></addata></record> |
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| ispartof | Thin solid films, 2005-08, Vol.485 (1), p.207-211 |
| issn | 0040-6090 1879-2731 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Diffusion barrier Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Ohmic contact Physics SiC Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Ta–Ru–N |
| title | Ta–Ru–N diffusion barriers for high-temperature contacts to p-type SiC |
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