The effect of HF processing on gate oxide degradation in aggressive poly buffered LOCOS isolation

We have investigated gate oxide degradation in metal-oxide semiconductor (MOS) devices associated with aggressive Poly Buffered Locos (PBL) isolation. Defects in the gate oxide resulting in severe degradation of charge-to-breakdown (Q/sub bd/) occurring at the interface between field oxide and activ...

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Veröffentlicht in:	IEEE electron device letters 1996-02, Vol.17 (2), p.50-52
Hauptverfasser:	Cox, K., Chonko, M., Honcik, C., VanDyke, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Curing Degradation Design for quality Hafnium MOS capacitors MOS devices Oxidation Silicon Wet etching
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