Synthesis and Properties of GaN Nanostructures

One-dimensional GaN nanostructure films were successfully synthesized by the recently developed sputtering post-nitridation technique. The morphology and structure of GaN nanowires are investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (...

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Veröffentlicht in:	Materials science forum 2005-01, Vol.475-479, p.3367-3370
Hauptverfasser:	Zong, Fu Jian, Xiao, Hongdi, Ma, Hong-Lei, Liu, Jian Qiang, Zhang, Hui Zhao, Xue, Cheng Shan, Yang, Ying Ge, Ma, Jin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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