A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modeling

A study of the parameters of the process of impurity-free vacancy disordering (IFVD) of GaAs-AlGaAs quantum-well structures is presented. The study includes photoluminescence excitation measurements which show that the as-grown barrier/well interface is better fitted by an exponential profile than a...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 1998-07, Vol.4 (4), p.661-668
Hauptverfasser:	Helmy, A.S., Johnson, N.P., Ke, M.L., Bryce, A.C., Aitchison, J.S., Marsh, J.H., Gontijo, I., Buller, G.S., Davidson, J., Dawson, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Councils Diffusion processes Integrated circuit technology Photoluminescence Physics Predictive models Quantum wells Spatial resolution Spectroscopy Time measurement
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