On the AlAs/GaAs (001) interface dielectric anisotropy
Reflectance anisotropy spectroscopy (RAS/RDS) so far has been mostly used for surface studies on III–V semiconductors. In the work reported here it was applied to the GaAs–AlAs (001) interface for measuring the interface dielectric anisotropy (IDA) by in-situ experiments performed in molecular beam...
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| Veröffentlicht in: | Thin solid films 2005-01, Vol.472 (1), p.261-269 |
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| creator | Hunderi, O. Zettler, J.-T. Haberland, K. |
| description | Reflectance anisotropy spectroscopy (RAS/RDS) so far has been mostly used for surface studies on III–V semiconductors. In the work reported here it was applied to the GaAs–AlAs (001) interface for measuring the interface dielectric anisotropy (IDA) by in-situ experiments performed in molecular beam epitaxy (MBE). From the measured RAS spectra of very thin AlAs overlayers (1–40 monolayers) on GaAs(001) the different contribution of surface, bulk and interface were separated. For the analysis, a three-layer model was used consisting of a single AlAs layer sandwiched between a well-separated and anisotropic interface layer and a surface layer. The upper limit for the ‘thickness’ of the surface and interface layers could be determined. Finally, an improved analytical formula for the deconvolution of surface and interface anisotropies is derived. |
| doi_str_mv | 10.1016/j.tsf.2004.06.150 |
| format | Article |
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In the work reported here it was applied to the GaAs–AlAs (001) interface for measuring the interface dielectric anisotropy (IDA) by in-situ experiments performed in molecular beam epitaxy (MBE). From the measured RAS spectra of very thin AlAs overlayers (1–40 monolayers) on GaAs(001) the different contribution of surface, bulk and interface were separated. For the analysis, a three-layer model was used consisting of a single AlAs layer sandwiched between a well-separated and anisotropic interface layer and a surface layer. The upper limit for the ‘thickness’ of the surface and interface layers could be determined. 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In the work reported here it was applied to the GaAs–AlAs (001) interface for measuring the interface dielectric anisotropy (IDA) by in-situ experiments performed in molecular beam epitaxy (MBE). From the measured RAS spectra of very thin AlAs overlayers (1–40 monolayers) on GaAs(001) the different contribution of surface, bulk and interface were separated. For the analysis, a three-layer model was used consisting of a single AlAs layer sandwiched between a well-separated and anisotropic interface layer and a surface layer. The upper limit for the ‘thickness’ of the surface and interface layers could be determined. Finally, an improved analytical formula for the deconvolution of surface and interface anisotropies is derived.</description><subject>III–V semiconductor interfaces and surfaces</subject><subject>Interface dielectric anisotropy</subject><subject>Reflectance anisotropy spectroscopy</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kDFPwzAQhS0EEqXwA9gyIRiS3jmtnYgpqqAgVeoCs-XYF-EqTYrtIvXf46rMTDe89530PsbuEQoEFLNtEUNXcIB5AaLABVywCVayzrks8ZJNUgC5gBqu2U0IWwBAzssJE5shi1-UNX0TZivdhOwxRU-ZGyL5ThvKrKOeTPTOZHpwYYx-3B9v2VWn-0B3f3fKPl9fPpZv-Xqzel8269yUXMScqlZaqVveEhdSSi4qNLrVxhgujRAGF7WFcl5XeOpZjp3UdUUtoG1la8spezj_3fvx-0Ahqp0LhvpeDzQeguKVwKoW81TEc9H4MQRPndp7t9P-qBDUyZDaqmRInQwpECoZSszzmaG04MeRV8E4GgxZ59NiZUf3D_0LvqBs8g</recordid><startdate>20050124</startdate><enddate>20050124</enddate><creator>Hunderi, O.</creator><creator>Zettler, J.-T.</creator><creator>Haberland, K.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20050124</creationdate><title>On the AlAs/GaAs (001) interface dielectric anisotropy</title><author>Hunderi, O. ; Zettler, J.-T. ; Haberland, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c326t-e8b7d7ab2be267772681cabaccc27c66c159d0349817d7ad21f7a98eb01db7bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>III–V semiconductor interfaces and surfaces</topic><topic>Interface dielectric anisotropy</topic><topic>Reflectance anisotropy spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hunderi, O.</creatorcontrib><creatorcontrib>Zettler, J.-T.</creatorcontrib><creatorcontrib>Haberland, K.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hunderi, O.</au><au>Zettler, J.-T.</au><au>Haberland, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the AlAs/GaAs (001) interface dielectric anisotropy</atitle><jtitle>Thin solid films</jtitle><date>2005-01-24</date><risdate>2005</risdate><volume>472</volume><issue>1</issue><spage>261</spage><epage>269</epage><pages>261-269</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><abstract>Reflectance anisotropy spectroscopy (RAS/RDS) so far has been mostly used for surface studies on III–V semiconductors. In the work reported here it was applied to the GaAs–AlAs (001) interface for measuring the interface dielectric anisotropy (IDA) by in-situ experiments performed in molecular beam epitaxy (MBE). From the measured RAS spectra of very thin AlAs overlayers (1–40 monolayers) on GaAs(001) the different contribution of surface, bulk and interface were separated. For the analysis, a three-layer model was used consisting of a single AlAs layer sandwiched between a well-separated and anisotropic interface layer and a surface layer. The upper limit for the ‘thickness’ of the surface and interface layers could be determined. Finally, an improved analytical formula for the deconvolution of surface and interface anisotropies is derived.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2004.06.150</doi><tpages>9</tpages></addata></record> |
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| subjects | III–V semiconductor interfaces and surfaces Interface dielectric anisotropy Reflectance anisotropy spectroscopy |
| title | On the AlAs/GaAs (001) interface dielectric anisotropy |
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