Suppression of parasitic bipolar action in ultra-thin-film fully-depleted CMOS/SIMOX devices by Ar-ion implantation into source/drain regions

This paper proposes a new technique that can effectively suppress the parasitic bipolar action (PBA) in ultrathin-film fully-depleted (FD)nMOSFET's/SIMOX with a floating body. In this technique, recombination centers are created in the source and drain (S/D) regions by deep Ar-ion implantation....

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Veröffentlicht in:	IEEE transactions on electron devices 1998-05, Vol.45 (5), p.1071-1076
Hauptverfasser:	Ohno, T., Takahashi, M., Kado, Y., Tsuchiya, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Argon Body regions Charge carrier processes CMOS process CMOS technology Electric variables Fabrication Impact ionization Integrated circuit technology MOSFET circuits
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