The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors

The effects of base p-dopant diffusion at junction interfaces of InGaAs/InAlAs HBTs with thin base thicknesses and high base dopings are reported. It is shown that HBTs with compositionally graded emitter-based (E-B) junctions are very tolerant to base dopant outdiffusion into the E-B graded region....

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Veröffentlicht in:	IEEE electron device letters 1992-03, Vol.13 (3), p.140-142
Hauptverfasser:	Hafizi, M., Metzger, R.A., Stanchina, W.E., Rensch, D.B., Jensen, J.F., Hooper, W.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bismuth Doping Electronics Exact sciences and technology Heterojunction bipolar transistors Indium compounds Indium gallium arsenide Indium phosphide Molecular beam epitaxial growth P-n junctions Photonic band gap Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Zusammenfassung:	The effects of base p-dopant diffusion at junction interfaces of InGaAs/InAlAs HBTs with thin base thicknesses and high base dopings are reported. It is shown that HBTs with compositionally graded emitter-based (E-B) junctions are very tolerant to base dopant outdiffusion into the E-B graded region. The RF performance is nearly unaffected by the diffusion, and the DC current gain and E-B junction breakdown voltages are improved with finite Be diffusion into the E-B graded region.< >
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.144990