Self-heating of submicrometer InP-InGaAs DHBTs

We studied the thermal properties of submicron InP-InGaAs-InP double heterojunction bipolar transistors (DHBTs) with emitter dimensions of A = 0.25 × 4 μm 2 . From the temperature dependence of V/sub bc/, we measured a thermal resistance of R/sub th/ = 3.3 /spl deg/C/mW for DHBTs with ion-implanted...

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Veröffentlicht in:	IEEE electron device letters 2004-06, Vol.25 (6), p.357-359, Article 357
Hauptverfasser:	Houtsma, V.E., Chen, J., Frackoviak, J., Hu, T., Kopf, R.F., Reyes, R.R., Tate, A., Yang, Y., Weimann, N.G., Chen, Y.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact resistance Devices Double heterojunction bipolar transistors Electrical resistance measurement Emitters (electron) Etching Heterojunction bipolar transistors Indium gallium arsenide Indium gallium arsenides Indium phosphide Simulation Temperature dependence Thermal conductivity Thermal properties Thermal resistance Two dimensional
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Beschreibung
Zusammenfassung:	We studied the thermal properties of submicron InP-InGaAs-InP double heterojunction bipolar transistors (DHBTs) with emitter dimensions of A = 0.25 × 4 μm 2 . From the temperature dependence of V/sub bc/, we measured a thermal resistance of R/sub th/ = 3.3 /spl deg/C/mW for DHBTs with ion-implanted n+-InP subcollector at room temperature, compared to a high R/sub th/ = 7.5 /spl deg/C/mW from DHBTs with conventional grown InGaAs subcollector. Two-dimensional device simulations confirm the measured results.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2004.828975