SEB occurrence in a VIP: Influence of the epi-substrate junction

Heavy ion induced burnout is reported for the first time in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on Nuclear Science 1998-06, Vol.45 (3), p.1624-1627
Hauptverfasser:	Lorfevre, E., Sudre, C., Dachs, C., Detcheverry, C., Palau, J.-M., Gasiot, J., Calvet, M.-C., Garnie, J., Ecoffet, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits ELECTRONIC CIRCUITS Failure analysis FAILURES HEAVY IONS INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Ion accelerators MOS devices MOSFETs Nuclear physics Performance evaluation PHYSICAL RADIATION EFFECTS Power supplies Testing Threshold current TWO-DIMENSIONAL CALCULATIONS
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Beschreibung
Zusammenfassung:	Heavy ion induced burnout is reported for the first time in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.685250