Self-contained charge-coupled split-electrode filters using a novel sensing technique
Self-contained single-chip charge-coupled split-electrode filters with 55 taps and a novel channel structure have been built with a double-level polysilicon NMOS process. Operating at a sample rate of 32 kHz, these devices provide a low-pass filter function with a passband from 0 to 3.2 kHz and a st...
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Veröffentlicht in: | IEEE journal of solid-state circuits 1977-12, Vol.12 (6), p.626-632 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Self-contained single-chip charge-coupled split-electrode filters with 55 taps and a novel channel structure have been built with a double-level polysilicon NMOS process. Operating at a sample rate of 32 kHz, these devices provide a low-pass filter function with a passband from 0 to 3.2 kHz and a stopband above 4 kHz. The image charge on the sense electrodes is detected with a novel sensing circuit employing two on-chip operational amplifiers, one of which suppresses the common-mode signal on the two sense buses while the other one integrates the difference signal. In addition, the chips carry antialiasing prefilters, a correlated double sample-and-hold circuit to minimize reset noise and to restore the output signal, and all the necessary peripheral logic and biasing circuitry so that the devices can be operated from a single master clock and two power supplies of +12 and -5 V, respectively. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.1977.1050970 |