The classical versus the quantum mechanical model of mobility degradation due to the gate field in MOSFET inversion layers

The current equation based on the classical model of mobility degradation due to the gate field fails at V_{GS} - V_{T} = 11, 7.5, and 4.5 V for MOSFET's with t OX = 450, 350, and 250 Å, respectively, at room temperature and at very low VDS. The failure is believed to be caused by the quantizat...

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Veröffentlicht in:	IEEE transactions on electron devices 1985-03, Vol.32 (3), p.700-710
1. Verfasser:	Lin, Mou-Shiung
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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