Relaxation effects in NMOS transistors after hot-carrier stressing

Aging studies on NMOS transistors with dry oxides at room temperature have revealed that the creation of interface traps and the trapping of positive charge in the oxide associated with hot-electron effects are not permanent, but can be reversed to some extent if the transistor drain is grounded and...

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Veröffentlicht in:	IEEE electron device letters 1987-05, Vol.8 (5), p.234-236
Hauptverfasser:	Doyle, B.S., Bourcerie, M., Marchetaux, J.-C., Boudou, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aging Annealing Applied sciences Atmospheric measurements Degradation Electronics Exact sciences and technology Hot carrier effects Hot carriers Kinetic theory MOSFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Threshold voltage Transistors
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