Relaxation effects in NMOS transistors after hot-carrier stressing
Aging studies on NMOS transistors with dry oxides at room temperature have revealed that the creation of interface traps and the trapping of positive charge in the oxide associated with hot-electron effects are not permanent, but can be reversed to some extent if the transistor drain is grounded and...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 1987-05, Vol.8 (5), p.234-236 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 236 |
|---|---|
| container_issue | 5 |
| container_start_page | 234 |
| container_title | IEEE electron device letters |
| container_volume | 8 |
| creator | Doyle, B.S. Bourcerie, M. Marchetaux, J.-C. Boudou, A. |
| description | Aging studies on NMOS transistors with dry oxides at room temperature have revealed that the creation of interface traps and the trapping of positive charge in the oxide associated with hot-electron effects are not permanent, but can be reversed to some extent if the transistor drain is grounded and left for some time. The relaxation is a substantial fraction of the original degradation at low degradation values and suggests that there is an annealing of some of the traps created by stressing. This annealing follows first-order kinetics for both created interface traps and trapped oxide charge, and is characterized by relaxation times τ r of 600-900 s. |
| doi_str_mv | 10.1109/EDL.1987.26614 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28596405</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1487164</ieee_id><sourcerecordid>28596405</sourcerecordid><originalsourceid>FETCH-LOGICAL-c445t-20ca86f374b2fa65ae4c10b15eeae178ef7f0feea4d32b158431c305d5915a93</originalsourceid><addsrcrecordid>eNqNkDtPwzAURi0EEqWwsrBkQGwpvvErGXmUh1RAgu6Ra67BKCTg60rw7zEUwQjTfeh833AY2wU-AeDN4fR0NoGmNpNKa5BrbARK1SVXWqyzETcSSgFcb7ItoifOQUojR-z4Fjv7ZlMY-gK9R5eoCH1xfXVzV6RoewqUhkiF9Qlj8Tik0tkYQ94pRSQK_cM22_C2I9z5nmM2P5vOTy7K2c355cnRrHRSqlRW3Nlae2HkovJWK4vSAV-AQrQIpkZvPPf5kPeiyu9aCnCCq3vVgLKNGLODVe1LHF6XSKl9DuSw62yPw5LaquE5BOpvsFaNlvwfoNTaVLrO4GQFujgQRfTtSwzPNr63wNtP92123366b7_c58D-d7MlZzufRbpAPykjjVANz9jeCguI-NspawNaig_Aq4wB</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24667268</pqid></control><display><type>article</type><title>Relaxation effects in NMOS transistors after hot-carrier stressing</title><source>IEEE Electronic Library (IEL)</source><creator>Doyle, B.S. ; Bourcerie, M. ; Marchetaux, J.-C. ; Boudou, A.</creator><creatorcontrib>Doyle, B.S. ; Bourcerie, M. ; Marchetaux, J.-C. ; Boudou, A.</creatorcontrib><description>Aging studies on NMOS transistors with dry oxides at room temperature have revealed that the creation of interface traps and the trapping of positive charge in the oxide associated with hot-electron effects are not permanent, but can be reversed to some extent if the transistor drain is grounded and left for some time. The relaxation is a substantial fraction of the original degradation at low degradation values and suggests that there is an annealing of some of the traps created by stressing. This annealing follows first-order kinetics for both created interface traps and trapped oxide charge, and is characterized by relaxation times τ r of 600-900 s.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1987.26614</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aging ; Annealing ; Applied sciences ; Atmospheric measurements ; Degradation ; Electronics ; Exact sciences and technology ; Hot carrier effects ; Hot carriers ; Kinetic theory ; MOSFETs ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Temperature ; Threshold voltage ; Transistors</subject><ispartof>IEEE electron device letters, 1987-05, Vol.8 (5), p.234-236</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c445t-20ca86f374b2fa65ae4c10b15eeae178ef7f0feea4d32b158431c305d5915a93</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1487164$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1487164$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7473590$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Doyle, B.S.</creatorcontrib><creatorcontrib>Bourcerie, M.</creatorcontrib><creatorcontrib>Marchetaux, J.-C.</creatorcontrib><creatorcontrib>Boudou, A.</creatorcontrib><title>Relaxation effects in NMOS transistors after hot-carrier stressing</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Aging studies on NMOS transistors with dry oxides at room temperature have revealed that the creation of interface traps and the trapping of positive charge in the oxide associated with hot-electron effects are not permanent, but can be reversed to some extent if the transistor drain is grounded and left for some time. The relaxation is a substantial fraction of the original degradation at low degradation values and suggests that there is an annealing of some of the traps created by stressing. This annealing follows first-order kinetics for both created interface traps and trapped oxide charge, and is characterized by relaxation times τ r of 600-900 s.</description><subject>Aging</subject><subject>Annealing</subject><subject>Applied sciences</subject><subject>Atmospheric measurements</subject><subject>Degradation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Hot carrier effects</subject><subject>Hot carriers</subject><subject>Kinetic theory</subject><subject>MOSFETs</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNqNkDtPwzAURi0EEqWwsrBkQGwpvvErGXmUh1RAgu6Ra67BKCTg60rw7zEUwQjTfeh833AY2wU-AeDN4fR0NoGmNpNKa5BrbARK1SVXWqyzETcSSgFcb7ItoifOQUojR-z4Fjv7ZlMY-gK9R5eoCH1xfXVzV6RoewqUhkiF9Qlj8Tik0tkYQ94pRSQK_cM22_C2I9z5nmM2P5vOTy7K2c355cnRrHRSqlRW3Nlae2HkovJWK4vSAV-AQrQIpkZvPPf5kPeiyu9aCnCCq3vVgLKNGLODVe1LHF6XSKl9DuSw62yPw5LaquE5BOpvsFaNlvwfoNTaVLrO4GQFujgQRfTtSwzPNr63wNtP92123366b7_c58D-d7MlZzufRbpAPykjjVANz9jeCguI-NspawNaig_Aq4wB</recordid><startdate>19870501</startdate><enddate>19870501</enddate><creator>Doyle, B.S.</creator><creator>Bourcerie, M.</creator><creator>Marchetaux, J.-C.</creator><creator>Boudou, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19870501</creationdate><title>Relaxation effects in NMOS transistors after hot-carrier stressing</title><author>Doyle, B.S. ; Bourcerie, M. ; Marchetaux, J.-C. ; Boudou, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c445t-20ca86f374b2fa65ae4c10b15eeae178ef7f0feea4d32b158431c305d5915a93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Aging</topic><topic>Annealing</topic><topic>Applied sciences</topic><topic>Atmospheric measurements</topic><topic>Degradation</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Hot carrier effects</topic><topic>Hot carriers</topic><topic>Kinetic theory</topic><topic>MOSFETs</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Doyle, B.S.</creatorcontrib><creatorcontrib>Bourcerie, M.</creatorcontrib><creatorcontrib>Marchetaux, J.-C.</creatorcontrib><creatorcontrib>Boudou, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Doyle, B.S.</au><au>Bourcerie, M.</au><au>Marchetaux, J.-C.</au><au>Boudou, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Relaxation effects in NMOS transistors after hot-carrier stressing</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1987-05-01</date><risdate>1987</risdate><volume>8</volume><issue>5</issue><spage>234</spage><epage>236</epage><pages>234-236</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Aging studies on NMOS transistors with dry oxides at room temperature have revealed that the creation of interface traps and the trapping of positive charge in the oxide associated with hot-electron effects are not permanent, but can be reversed to some extent if the transistor drain is grounded and left for some time. The relaxation is a substantial fraction of the original degradation at low degradation values and suggests that there is an annealing of some of the traps created by stressing. This annealing follows first-order kinetics for both created interface traps and trapped oxide charge, and is characterized by relaxation times τ r of 600-900 s.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/EDL.1987.26614</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1987-05, Vol.8 (5), p.234-236 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28596405 |
| source | IEEE Electronic Library (IEL) |
| subjects | Aging Annealing Applied sciences Atmospheric measurements Degradation Electronics Exact sciences and technology Hot carrier effects Hot carriers Kinetic theory MOSFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Threshold voltage Transistors |
| title | Relaxation effects in NMOS transistors after hot-carrier stressing |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T19%3A58%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Relaxation%20effects%20in%20NMOS%20transistors%20after%20hot-carrier%20stressing&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Doyle,%20B.S.&rft.date=1987-05-01&rft.volume=8&rft.issue=5&rft.spage=234&rft.epage=236&rft.pages=234-236&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/EDL.1987.26614&rft_dat=%3Cproquest_RIE%3E28596405%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24667268&rft_id=info:pmid/&rft_ieee_id=1487164&rfr_iscdi=true |