Realization of improved metallization-Ti/Al/Ti/W/Au ohmic contacts to n-GaN for high temperature application

Tungsten metal layer was used for the first time as an effective diffusion barrier for the standard Ti/Al/Ti/Au ohmic metallization scheme to obtain thermally stable ohmic contact suitable for high temperature applications. Comparative studies were performed on three distinct metallization schemes:...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. C 2005-05, Vol.2 (7), p.2536-2539
Hauptverfasser:	Motayed, A., Davydov, A.V., Boettinger, W. J., Josell, D., Shapiro, A.J., Levin, I., Zheleva, T., Harris, G. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	68.37.Hk 68.37.Lp 73.40.Cg 73.61.Ey
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!