A nonvolatile memory element based on a quaterthiophene field-effect transistor

Organic field-effect transistors were fabricated with Quaterthiophene (4T) as the active material and a ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON and OFF-states could be written to...

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Veröffentlicht in:	Materials letters 2005-04, Vol.59 (10), p.1165-1168
Hauptverfasser:	Unni, K.N. Narayanan, de Bettignies, Remi, Dabos-Seignon, Sylvie, Nunzi, Jean-Michel
Format:	Artikel
Sprache:	eng
Schlagworte:	Ferroelectric effect Nonvolatile memory Organic field-effect transistor Organic semiconductor Polymers Thin films
Online-Zugang:	Volltext
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