A silicon-based integrated NMOS-p-i-n photoreceiver

For large-volume optoelectronics applications, the low cost, manufacturability and reliability of silicon MOSFET technology are advantageous. In addition, silicon photodetectors operate quite efficiently at the 850 nm wavelength of economical AlGaAs light sources. In this paper, we report on a silic...

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Veröffentlicht in:	IEEE transactions on electron devices 1996-03, Vol.43 (3), p.411-416
Hauptverfasser:	Garrett, L.D., Qi, J., Schow, C.L., Campbell, J.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Costs Light sources Manufacturing MOSFET circuits Optical device fabrication Optical receivers Photodetectors Photodiodes Silicon
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