RTD/2-D MESFET logic element for compact, ultra-low-power electronics

We describe compact and highly functional logic elements utilizing a two-dimensional (2-D) MESFET with a resonant tunneling diode load. The 2-D MESFET uses two lateral Schottky gate contacts to modulate the width of the 2-D electron gas layer. The novel contact geometry results in reduced gate capac...

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Veröffentlicht in:	IEEE transactions on electron devices 1997-07, Vol.44 (7), p.1033-1039
Hauptverfasser:	Robertson, J., Ytterdal, T., Peatman, W.C.B., Tsai, R.S., Brown, E.R., Shur, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Electrons Geometry HEMTs Inverters Logic MESFETs Resonant tunneling devices Schottky diodes Two dimensional displays
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