A radiation-hardened 32-bit microprocessor based on the commercial CMOS process

A radiation-hardened 32-bit microprocessor based on the commercial CMOS process, usable up to 1 kGy(Si), has been developed by (1) adding a silicon nitride passivation layer and (2) thinning the field oxide. Both techniques suppress the leakage current generated by the parasitic MOSFET, because its...

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Veröffentlicht in:	IEEE Transactions on Nuclear Science 1994-12, Vol.41 (6), p.2481-2486
Hauptverfasser:	Yoshioka, S., Kamimura, H., Akiyama, M., Nakamura, M., Tamura, T., Kuboyama, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Clocks CMOS process COMPUTER ARCHITECTURE Electronics Exact sciences and technology FABRICATION Hydrogen INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Interface states Leakage current MICROPROCESSORS MOSFET circuits Passivation RADIATION HARDENING Silicon SPACE FLIGHT Testing, measurement, noise and reliability Threshold voltage
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