Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs
Boron is found to segregate readily from the channel region into the arsenic implanted source/data regions during the As activation anneal. The resulting boron depletion around the source and drain locally lowers the surface potential required for inversion and contributes substantially to the V/sub...
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| Veröffentlicht in: | IEEE electron device letters 1993-07, Vol.14 (7), p.345-347 |
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| container_end_page | 347 |
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| container_issue | 7 |
| container_start_page | 345 |
| container_title | IEEE electron device letters |
| container_volume | 14 |
| creator | Acovic, A. Sadana, D.K. Davari, B. Grutzmacher, D. Cardone, F. |
| description | Boron is found to segregate readily from the channel region into the arsenic implanted source/data regions during the As activation anneal. The resulting boron depletion around the source and drain locally lowers the surface potential required for inversion and contributes substantially to the V/sub T/ rolloff and drain-induced barrier lowering (DIBL) in subquarter-micrometer NMOSFETs. This boron redistribution originates from the As implantation damage in the source and drain regions.< > |
| doi_str_mv | 10.1109/55.225568 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28555851</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>225568</ieee_id><sourcerecordid>26185859</sourcerecordid><originalsourceid>FETCH-LOGICAL-c337t-86c6bef348c450d5407fdedf2b8f74fdd31cf15df0325f79cd8180282dd71703</originalsourceid><addsrcrecordid>eNqF0L9PAyEUB3BiNLFWB1cnBmPicBUOOOjYNP5Kqh3s4nSh8LCYK1fhbvC_F72mqxPJ4_O-efkidEnJhFIyvRNiUpZCVOoIjagQqiCiYsdoRCSnBaOkOkVnKX0SQjmXfITeZzFB8Aanto8GsA4W26h9wH67a3TosA-2N5Cn8BG11Z1vA24dTps2doXZ6BCgweAcmC5ljF9flm8P96t0jk6cbhJc7N8xWuXx_KlYLB-f57NFYRiTXaEqU63BMa4MF8QKTqSzYF25Vk5yZy2jxlFhHWGlcHJqrKKKlKq0VlJJ2BjdDLG72H71kLp665OBJt8ObZ_qUolcg6D_w4qqDKcZ3g7QxDalCK7eRb_V8bumpP4tuRaiHkrO9nofqpPRjYs6GJ8OC1wRyf7Y1cA8ABx-9xk_X6SDbA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26185859</pqid></control><display><type>article</type><title>Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs</title><source>IEEE</source><creator>Acovic, A. ; Sadana, D.K. ; Davari, B. ; Grutzmacher, D. ; Cardone, F.</creator><creatorcontrib>Acovic, A. ; Sadana, D.K. ; Davari, B. ; Grutzmacher, D. ; Cardone, F.</creatorcontrib><description>Boron is found to segregate readily from the channel region into the arsenic implanted source/data regions during the As activation anneal. The resulting boron depletion around the source and drain locally lowers the surface potential required for inversion and contributes substantially to the V/sub T/ rolloff and drain-induced barrier lowering (DIBL) in subquarter-micrometer NMOSFETs. This boron redistribution originates from the As implantation damage in the source and drain regions.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.225568</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Boron ; Degradation ; Electronics ; Exact sciences and technology ; Implants ; MOSFETs ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE electron device letters, 1993-07, Vol.14 (7), p.345-347</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-86c6bef348c450d5407fdedf2b8f74fdd31cf15df0325f79cd8180282dd71703</citedby><cites>FETCH-LOGICAL-c337t-86c6bef348c450d5407fdedf2b8f74fdd31cf15df0325f79cd8180282dd71703</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/225568$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/225568$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4807368$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Acovic, A.</creatorcontrib><creatorcontrib>Sadana, D.K.</creatorcontrib><creatorcontrib>Davari, B.</creatorcontrib><creatorcontrib>Grutzmacher, D.</creatorcontrib><creatorcontrib>Cardone, F.</creatorcontrib><title>Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Boron is found to segregate readily from the channel region into the arsenic implanted source/data regions during the As activation anneal. The resulting boron depletion around the source and drain locally lowers the surface potential required for inversion and contributes substantially to the V/sub T/ rolloff and drain-induced barrier lowering (DIBL) in subquarter-micrometer NMOSFETs. This boron redistribution originates from the As implantation damage in the source and drain regions.< ></description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Boron</subject><subject>Degradation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Implants</subject><subject>MOSFETs</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqF0L9PAyEUB3BiNLFWB1cnBmPicBUOOOjYNP5Kqh3s4nSh8LCYK1fhbvC_F72mqxPJ4_O-efkidEnJhFIyvRNiUpZCVOoIjagQqiCiYsdoRCSnBaOkOkVnKX0SQjmXfITeZzFB8Aanto8GsA4W26h9wH67a3TosA-2N5Cn8BG11Z1vA24dTps2doXZ6BCgweAcmC5ljF9flm8P96t0jk6cbhJc7N8xWuXx_KlYLB-f57NFYRiTXaEqU63BMa4MF8QKTqSzYF25Vk5yZy2jxlFhHWGlcHJqrKKKlKq0VlJJ2BjdDLG72H71kLp665OBJt8ObZ_qUolcg6D_w4qqDKcZ3g7QxDalCK7eRb_V8bumpP4tuRaiHkrO9nofqpPRjYs6GJ8OC1wRyf7Y1cA8ABx-9xk_X6SDbA</recordid><startdate>19930701</startdate><enddate>19930701</enddate><creator>Acovic, A.</creator><creator>Sadana, D.K.</creator><creator>Davari, B.</creator><creator>Grutzmacher, D.</creator><creator>Cardone, F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19930701</creationdate><title>Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs</title><author>Acovic, A. ; Sadana, D.K. ; Davari, B. ; Grutzmacher, D. ; Cardone, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-86c6bef348c450d5407fdedf2b8f74fdd31cf15df0325f79cd8180282dd71703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Boron</topic><topic>Degradation</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Implants</topic><topic>MOSFETs</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Acovic, A.</creatorcontrib><creatorcontrib>Sadana, D.K.</creatorcontrib><creatorcontrib>Davari, B.</creatorcontrib><creatorcontrib>Grutzmacher, D.</creatorcontrib><creatorcontrib>Cardone, F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Acovic, A.</au><au>Sadana, D.K.</au><au>Davari, B.</au><au>Grutzmacher, D.</au><au>Cardone, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1993-07-01</date><risdate>1993</risdate><volume>14</volume><issue>7</issue><spage>345</spage><epage>347</epage><pages>345-347</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Boron is found to segregate readily from the channel region into the arsenic implanted source/data regions during the As activation anneal. The resulting boron depletion around the source and drain locally lowers the surface potential required for inversion and contributes substantially to the V/sub T/ rolloff and drain-induced barrier lowering (DIBL) in subquarter-micrometer NMOSFETs. This boron redistribution originates from the As implantation damage in the source and drain regions.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.225568</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 1993-07, Vol.14 (7), p.345-347 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE |
| subjects | Annealing Applied sciences Boron Degradation Electronics Exact sciences and technology Implants MOSFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs |
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