Electron beam induced surface modification of amorphous Sb2S3 chalcogenide films

A surface modification (expansion) has been observed in amorphous antimony based chalcogenide (Sb2S3) thin films when a pulsed electron beam is focused onto the surface of the film at accelerating voltages between 15 and 30 kV. The dependence of pattern heights and width on parameters such as exposu...

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Veröffentlicht in:Applied surface science 2005-04, Vol.243 (1-4), p.148-150
Hauptverfasser: DEBNATH, R. K, FITZGERALD, A. G
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description A surface modification (expansion) has been observed in amorphous antimony based chalcogenide (Sb2S3) thin films when a pulsed electron beam is focused onto the surface of the film at accelerating voltages between 15 and 30 kV. The dependence of pattern heights and width on parameters such as exposure time, beam current and accelerating voltage have also been studied. The modification of the film surface involves lateral and vertical expanded which is typically in the micrometre and submicrometre range. This phenomenon can be explained in terms of electrostatic force.
doi_str_mv 10.1016/j.apsusc.2004.09.104
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subjects Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Electrons and positron radiation effects
Exact sciences and technology
Materials science
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
Surface treatments
title Electron beam induced surface modification of amorphous Sb2S3 chalcogenide films
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