Electron beam induced surface modification of amorphous Sb2S3 chalcogenide films
A surface modification (expansion) has been observed in amorphous antimony based chalcogenide (Sb2S3) thin films when a pulsed electron beam is focused onto the surface of the film at accelerating voltages between 15 and 30 kV. The dependence of pattern heights and width on parameters such as exposu...
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Veröffentlicht in: | Applied surface science 2005-04, Vol.243 (1-4), p.148-150 |
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description | A surface modification (expansion) has been observed in amorphous antimony based chalcogenide (Sb2S3) thin films when a pulsed electron beam is focused onto the surface of the film at accelerating voltages between 15 and 30 kV. The dependence of pattern heights and width on parameters such as exposure time, beam current and accelerating voltage have also been studied. The modification of the film surface involves lateral and vertical expanded which is typically in the micrometre and submicrometre range. This phenomenon can be explained in terms of electrostatic force. |
doi_str_mv | 10.1016/j.apsusc.2004.09.104 |
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subjects | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electrons and positron radiation effects Exact sciences and technology Materials science Physical radiation effects, radiation damage Physics Structure of solids and liquids crystallography Surface treatments |
title | Electron beam induced surface modification of amorphous Sb2S3 chalcogenide films |
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