Planar field-effect coupled quantum wires
Summary form only given. Two planar quantum wires whose coupling can be controlled through the field-effect action of a gate were fabricated. Their split-gate coupled wire scheme provides a new architecture for studying electron interaction in low-dimensionality systems. This work might lead to the...
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Veröffentlicht in: | IEEE transactions on electron devices 1991-12, Vol.38 (12), p.2715-2716 |
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container_title | IEEE transactions on electron devices |
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creator | Eugster, C.C. del Alamo, J.A. Rooks, M.J. |
description | Summary form only given. Two planar quantum wires whose coupling can be controlled through the field-effect action of a gate were fabricated. Their split-gate coupled wire scheme provides a new architecture for studying electron interaction in low-dimensionality systems. This work might lead to the conception of electron devices with enhanced functionality.< > |
doi_str_mv | 10.1109/16.158748 |
format | Article |
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Two planar quantum wires whose coupling can be controlled through the field-effect action of a gate were fabricated. Their split-gate coupled wire scheme provides a new architecture for studying electron interaction in low-dimensionality systems. This work might lead to the conception of electron devices with enhanced functionality.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.158748</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carrier processes ; Electrodes ; Electrons ; Gallium arsenide ; HEMTs ; Lithography ; MODFETs ; Split gate flash memory cells ; Temperature ; Wires</subject><ispartof>IEEE transactions on electron devices, 1991-12, Vol.38 (12), p.2715-2716</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1240-7cf8b96b4f3c5e8a2f1413120c6180da77db44ac7469d2e67380627dafbf12353</citedby><cites>FETCH-LOGICAL-c1240-7cf8b96b4f3c5e8a2f1413120c6180da77db44ac7469d2e67380627dafbf12353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/158748$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/158748$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Eugster, C.C.</creatorcontrib><creatorcontrib>del Alamo, J.A.</creatorcontrib><creatorcontrib>Rooks, M.J.</creatorcontrib><title>Planar field-effect coupled quantum wires</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Summary form only given. Two planar quantum wires whose coupling can be controlled through the field-effect action of a gate were fabricated. Their split-gate coupled wire scheme provides a new architecture for studying electron interaction in low-dimensionality systems. This work might lead to the conception of electron devices with enhanced functionality.< ></description><subject>Charge carrier processes</subject><subject>Electrodes</subject><subject>Electrons</subject><subject>Gallium arsenide</subject><subject>HEMTs</subject><subject>Lithography</subject><subject>MODFETs</subject><subject>Split gate flash memory cells</subject><subject>Temperature</subject><subject>Wires</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNpF0E1LxDAQBuAgCtbVg1dPPQl7yJpJ0iQ9yuIXLOhBzyFNJlBpt91ki_jvrVTwNAzz8DK8hFwD2wCw-g7UBiqjpTkhBVSVprWS6pQUjIGhtTDinFzk_DmvSkpekPVb5_YulbHFLlCMEf2x9MM0dhjKw-T2x6kvv9qE-ZKcRddlvPqbK_Lx-PC-faa716eX7f2OeuCSUe2jaWrVyCh8hcbxCBIEcOYVGBac1qGR0nktVR04Ki0MU1wHF5sIXFRiRW6X3DENhwnz0fZt9tjNf-IwZctNJZSq2QzXC_RpyDlhtGNqe5e-LTD7W4YFZZcyZnuz2BYR_91y_AGi3lfu</recordid><startdate>199112</startdate><enddate>199112</enddate><creator>Eugster, C.C.</creator><creator>del Alamo, J.A.</creator><creator>Rooks, M.J.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>199112</creationdate><title>Planar field-effect coupled quantum wires</title><author>Eugster, C.C. ; del Alamo, J.A. ; Rooks, M.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1240-7cf8b96b4f3c5e8a2f1413120c6180da77db44ac7469d2e67380627dafbf12353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Charge carrier processes</topic><topic>Electrodes</topic><topic>Electrons</topic><topic>Gallium arsenide</topic><topic>HEMTs</topic><topic>Lithography</topic><topic>MODFETs</topic><topic>Split gate flash memory cells</topic><topic>Temperature</topic><topic>Wires</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Eugster, C.C.</creatorcontrib><creatorcontrib>del Alamo, J.A.</creatorcontrib><creatorcontrib>Rooks, M.J.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Eugster, C.C.</au><au>del Alamo, J.A.</au><au>Rooks, M.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Planar field-effect coupled quantum wires</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1991-12</date><risdate>1991</risdate><volume>38</volume><issue>12</issue><spage>2715</spage><epage>2716</epage><pages>2715-2716</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Summary form only given. Two planar quantum wires whose coupling can be controlled through the field-effect action of a gate were fabricated. Their split-gate coupled wire scheme provides a new architecture for studying electron interaction in low-dimensionality systems. This work might lead to the conception of electron devices with enhanced functionality.< ></abstract><pub>IEEE</pub><doi>10.1109/16.158748</doi><tpages>2</tpages></addata></record> |
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ispartof | IEEE transactions on electron devices, 1991-12, Vol.38 (12), p.2715-2716 |
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subjects | Charge carrier processes Electrodes Electrons Gallium arsenide HEMTs Lithography MODFETs Split gate flash memory cells Temperature Wires |
title | Planar field-effect coupled quantum wires |
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